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NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and amplification. ORDERING INFOR...
...Transistors These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transis...
... Silicon NPN Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Descrip...
2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ABSOLUTE MAXIMUM RATING (Ta=25, u...
...TRANSISTORS ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWE...
... transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units VDG ......
2SA1736 Power Amplifier Applications Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High speed switching time: tstg = 0.2 s (typ.) Small flat package PC = 1...
TC74VHC11FT TRIPLE 3-INPUT AND GATE low cost audio amplifier Triple 3-Input AND Gate The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the ...
Silicon PNP Power Transistors 2SB668 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power amplifier and switching applications Absolute maximum ratings(Ta=25℃) SYMB...
Silicon NPN Power Transistors 2SC2073 DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute maximum ratings (Ta=25℃) SYMBO...
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET P...
FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. It has b...
... Purpose Mosfet Transistor / General Purpose NPN Transistor General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP E...
... Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor 200V 18A (Tc) 150W (Tc) Surface Mount D2PAK Advanced Process Technology Dyna...
FDS6990A Power Mosfet Transistor Dual N Channel Logic PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that ha...
... SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power am...
... ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...
... Silicon NPN Power Transistors high power mosfet transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Descrip...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...