| Sign In | Join Free | My burrillandco.com |
|
...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible AP...
TIP42C PNP 100V 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this de...
... extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an e...
Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combine...
...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 ...
...Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base i...
SOT-23 Plastic-Encapsulate MOSFETS BC3400 N-Channel Enhancement Mode Field Effect Transistor BC3400 SOT-23 Datasheet.pdf FEATURES High dense cell design for extremely low RDS(ON) Exceptional on-resistance and m...
IRFB3207ZPBF MOSFET Transistors CA3020A TGS2600 Discrete Semiconductors Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and H...
IRFB3207ZPBF MOSFET Transistors CA3020A TGS2600 Discrete Semiconductors Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and H...
...Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr...
DMN5L06DWK7 MOSFET Dual N Channel 2 Channel Small Signal kdk smd transistors surface mode transistors Features Dual N-Channel MOSFET Low On-Resistance (1.0V Max) Very Low Gate Threshold Voltage Low Inpu...
...Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr...
DMN5L06DWK7 MOSFET Dual N Channel 2 Channel Small Signal kdk smd transistors surface mode transistors Features Dual N-Channel MOSFET Low On-Resistance (1.0V Max) Very Low Gate Threshold Voltage Low Inpu...
...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gat...
... parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature ...
...MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gat...
...Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 t...
...Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 t...