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...Ω. 3. It provides low input and gate capacitance, making it suitable for high-frequency switching applications. 4. It offers low gate charge and fast switching times, making it suitable for high-speed switch...
...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 ...
General Description: The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to ma...
...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gat...
... density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and ...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteris...
...MOSFET) is a high power, low on resistance, high frequency device with excellent switching performance. It is widely used in Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Swit...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
...MOSFET 60V 190mA Single SMD/SMT Products Description: The NX7002AK is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technolo...
...% avalanche tested. Zener-protected. Absolute Maximum Ratings : Switching applications. Tailored for very high frequency converters (f > 150 kHz). Description : This device is an N-channel Power MOSFET devel...
...MOSFET transistor. The following are its applications, conclusions, and parameters: Application: Used as a high-voltage and high-power load switch Used as a switch for converters and regulators Conclusion: H...
...MOSFET General Description This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protectio...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
... epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(o...
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v...
...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V ...
SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maxim...
...MOSFET 500V/28A Rating Low 0.135andOmega; Rds(on) Fast Switching Avalanche Rugged Eco-Mode Low Gate Charge TO-220FP Package RoHS Certified for SMPS andamp; Motor Drives andnbsp; Features andbull; 100% avalan...
... on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. ...