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Total 341 products for n mos transistor Manufacture & Suppliers

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m�� RDS(ON) (at VGS = 4.5V) < 30m�� RDS(ON) (at VGS = 2.5V) < 48m�� General Description The HXY4404 uses advance...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5m�� RDS(ON) (at VGS = 4.5V) < 15.5m�� General Description The HXY4406A uses advanced trench technology toprovi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23m�� (VGS = 10V) RDS(ON) < 35m�� (VGS = 4.5V) General Description The HXY4466 uses advanced trench technology to provide excell...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2302Z Mos Field Effect Transistor N Channel 20-V(D-S) MOSFET

SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V Maximum ratings (Ta=25℃ unless otherwise noted) T =25 a ℃ unless otherwise specified Typical Characteristic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120m��@ 10 V < VGS = RDS(on) < 136m��@VGS = 4.5V FEATURE �� High power and current handing capability �� Lead...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Ultra Pure Low Density Heat Dissipating Mo / Cu Laminates In High Power Transistors

Ultra-pure Low Density Heat Dissipating Mo/cu Laminates In High-power Transistors Description: Consisting of ultra-pure molybdenum with OFC in 30% weight,molybdenum copper composite has the properties of higher...

Zhuzhou Jiabang Refractory Metal Co., Ltd
Hunan,China

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AON7403 MOSFET QFN-8 Transistor IC Sample Supported

... AON7409 AON7410 AON7412 AON7400A QFN-8 Chipset Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.) Passive components (capacitors, resistors, inductors, etc....

ChongMing Group (HK) Int'l Co., Ltd
China

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PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor

...MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of ...

ChongMing Group (HK) Int'l Co., Ltd
China

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High Power Transistor Switch

2SK1305 N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE) High Speed High Voltage Switch Aplication DC-DC Coverter Relay Drive and Motro Drive Aplication Application High spe...

Anterwell Technology Ltd.
Guangdong,China

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Durable Mosfet Power Transistor FET STB270N4F3 STB270N TO-263-3 Long Lifespan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Wha...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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High Hardness Alumina Ceramic Plate Sheet For Transistor Heat Sink

High Hardness Wear Resistance Alumina Ceramic Ceramic Insulator Sheet Aluminum ceramic Sheet is suitable for the IC, MOS transistors, schottky, IGBT and so on need to surface heat source of heat. Alumina cerami...

Dongguan Ming Rui Ceramic Technology Co.,ltd
Guangdong,China

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Durable Mosfet Power Transistor FET STB270N4F3 STB270N TO-263-3 Long Lifespan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Wha...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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High Hardness Alumina Ceramic Plate Sheet For Transistor Heat Sink

High Hardness Wear Resistance Alumina Ceramic Ceramic Insulator Sheet Aluminum ceramic Sheet is suitable for the IC, MOS transistors, schottky, IGBT and so on need to surface heat source of heat. Alumina cerami...

Dongguan Ming Rui Ceramic Technology Co.,ltd
Guangdong,China

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NTJD5121NT1G SOT363 Low Signal Relays N Channel 60V 0.295A MOS FET

.../SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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NTJD5121NT1G SOT363 Low Signal Relays N Channel 60V 0.295A MOS FET

.../SMT Package / Case: SC-88-6 Transistor Polarity: N-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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AON7403 MOSFET QFN-8 Transistor IC Sample Supported

... AON7409 AON7410 AON7412 AON7400A QFN-8 Chipset Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.) Passive components (capacitors, resistors, inductors, etc....

LU'S TECHNOLOGY CO., Ltd.
China

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