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Total 341 products for n mos transistor Manufacture & Suppliers

Single IGBTs Transistors IXBK64N250 Integrated Circuit Chip TO-264-3 Transistors

Single IGBTs Transistors IXBK64N250 Integrated Circuit Chip TO-264-3 Transistors Product Description Of IXBK64N250 IXBK64N250 is 2500V, 75A, 735W High Voltage, High Gain BiMOSFET, Monolithic Bipolar MOS IGBTs ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Cool MOS™ Power Transistor Electronic IC Chips , 11N80C3 digital integrated circuits

11N80C3 Cool MOS�� Power Transistor digital integrated circuits Feature �� New revolutionary high voltage technology �� Ultra low gate charge �� Periodic avalanche rated �� Extreme dv/dt rated �� Ultra low effective ...

Anterwell Technology Ltd.
Guangdong,China

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IGBT Power Module SPW47N60C3 - Technologies AG - Cool MOS Power Transistor

Quick Detail: Cool MOS Power Transistor Description: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge • Periodic ......

Mega Source Elec.Limited
China

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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8m�� RDS(ON) (at VGS=4.5V) < 13.5m�� General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Ga...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m�� RDS(ON) (at VGS=4.5V) < 18m�� General Description �� Low RDS(ON) �� Logic Level Gate Drive �� Excellent Gate ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24m�� RDS(ON) (at VGS = 4.5V) < 30m�� RDS(ON) (at VGS = 2.5V) < 48m�� General Description The HXY4404 uses advance...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5m�� RDS(ON) (at VGS = 4.5V) < 15.5m�� General Description The HXY4406A uses advanced trench technology toprovi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23m�� (VGS = 10V) RDS(ON) < 35m�� (VGS = 4.5V) General Description The HXY4466 uses advanced trench technology to provide excell...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2302Z Mos Field Effect Transistor N Channel 20-V(D-S) MOSFET

SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V Maximum ratings (Ta=25℃ unless otherwise noted) T =25 a ℃ unless otherwise specified Typical Characteristic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120m��@ 10 V < VGS = RDS(on) < 136m��@VGS = 4.5V FEATURE �� High power and current handing capability �� Lead...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This devic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS �� High frequency switch power supply �� Free wheeling diodes, polarity protection ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip PRODUCT DESCRIPTION Part number FDB2614 is manufactured by FAIRCHILD and distributed by Stjk. As one of the leading dist...

STJK(HK) ELECTRONICS CO.,LIMITED
China

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High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

Suitable for high frequency switching power supply 20A 200V Schottky Barrier Diode HBR20200 TO-220C TO-220HF TO-263 APPLICATIONS �� High frequency switch power supply �� Free wheeling diodes, polarity protection ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8m�� RDS(ON) (at VGS=4.5V) < 13.5m�� General Description Trench Power AlphaSGTTM technology Low RDS(ON) Low Ga...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5m�� RDS(ON) (at VGS=4.5V) < 18m�� General Description �� Low RDS(ON) �� Logic Level Gate Drive �� Excellent Gate ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Mos Transistor

Total 341 products for n mos transistor Manufacture & Suppliers

Single IGBTs Transistors IXBK64N250 Integrated Circuit Chip TO-264-3 Transistors

Cool MOS™ Power Transistor Electronic IC Chips , 11N80C3 digital integrated circuits

IGBT Power Module SPW47N60C3 - Technologies AG - Cool MOS Power Transistor

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

HXY4404 Mos Field Effect Transistor Low Gate Charge For Switching Application

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

HXY2302Z Mos Field Effect Transistor N Channel 20-V(D-S) MOSFET

HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

HXY2312 N Channel 20-V(D-S) Mos Field Effect Transistor SOT-23 Plastic Encapsulate

18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip

High Frequency Mos Field Effect Transistor 20A 200V Polarity Protection Application

60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive