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RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEA...
... MOS Transistor. Specification Of IXBX50N360HV Part Number IXBX50N360HV Voltage - Collector Emitter Breakdown (Max) 3600 V Current - Collector (Ic) (Max) 125 A ......
Transistors TO-247-3 TW015N120C,S1F N-Channel Single FETs MOSFETs Transistors 1200V Product Description Of TW015N120C,S1F TW015N120C,S1F is Silicon Carbide N-Channel MOS Transistors, suitable for use in Switch...
RD06HVF1 RF POWER MOSFET Silicon Transistor 175MHz 6W for amplifiers applications Description of RD06HVF1 RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications FEA...
Quick Detail: Cool MOS Power Transistor Description: The SPW47N60C3 is a Cool MOS Power Transistor. Applications: • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate ...
MOSFET Transistors NTMFS4C05NT1G MOS Single Transistors NTMFS4C05 DFN5 Product Description NTMFS4C05NT1G is Surface Mount N-Channel Transistors. The maximum gate charge at different Vgs is 14 nC @ 4.5 V, Curren...
SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate ......
Quick Detail: MRF134 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FET Description: .designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range. Guaranteed 28 Volt, 150...
MRF136 is a N-CHANNEL MOS BROADBAND RF POWER FETs. Part NO: MRF136 Brand: FSL Date Code: 120+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High freque...
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications * Low drain−source ON resistance : ......
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS (2) ...
... Transistor Cu/Mo/Cu Flanges With Good Heat Dissipation Description: Cu/Mo/Cu(CMC) is a sandwich composite including a molybdenum core layer and two copper clad layers. It has tailorable CTE, high thermal co...
... Breakdown Voltage: 30 V Id - Continuous Drain Current: 40 A Fall Time: 2.4 Ns Transistor Type: 1 N-Channel Rds On - Drain-Source Resistance: 7.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - ......
Original New MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirem...
... Transistors TO-247-3 Through Hole Product Description Of IXBH32N300 IXBH32N300 is High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor. Specification Of IXBH32N300 Part Number: IXBH32N300 P...
... = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This...
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P Channel N Type Transistor , 19P03 D-U-V High Voltage Power Mosfet N Type Transistor Introduction A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed...
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enab...