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SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For ......
TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial pr...
... = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This...
High power NPN epitaxial planar transistor 2SD669A Product Description Model Number 2SD669A Package TO-3P Date Code 18+ Packing Tape and reel/ Tube Stock Enough Stock Supplier Quanyuantong Electronics Co.,ltd L...
Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband largesignal amplifier and oscillator applications up to 400 MHz range, in either sin...
PHW926 is a Power MOS transistors Avalanche energy rated. Part NO: PHW926 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws ......
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) • High forward transfer ......
2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward transfer admittance: |Yfs| = 0.4 S (......
TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin p...
SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching......
SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching......
MOSFET N-CH 1500V 2A IC Chip TO-3P 2SK2225-80-E-T2 2SK2225 Products Description: 1. Silicon N Channel MOS FET Silicon N Channel MOS FET, through hole N Channel 2A (Ta) 50W (Tc) TO 3PFM 2.Trans MOSFET N-CH Si 1....
TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba -MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combinin...
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...Transistor Tester Multimeter Display TFT For Diode Triode MOS/PNP/NPN Capacitor Resistor Tr Product Description: This is a cost-efective and widely used transistor detector. (an be used to detect NPN and PNP...
...transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche te...