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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management Mos Field Effect Transistor Description The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET...
...Mos Field Effect Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and ...
Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management Mos Field Effect Transistor Description The Mos Field Effect Transistor is a type of MOSFET. The operating principle of power MOSFET...
...Mos Field Effect Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and ...
...Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Aval...
...Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Aval...
...Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Aval...
...Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Aval...
... Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, sing...
... power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ......
... power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ......
V Configurations Mos Field Effect Transistor N / P Channel Enhancement Mode Mos Field Effect Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resist...
Customized Size Mos Field Effect Transistor With Low ON Resistance Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher v...
...Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excelle...
...Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excelle...