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...NPN - PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transisto...
MMBT5551 NPN High Voltage Transistor The MMBT5551 is an NPN silicon planar design transistor offering high voltage capability with a collector-emitter voltage of 160V and a continuous collector current of 600mA...
NPN General Purpose Transistors The BC846, BC847, BC848, BC849, and BC850 series are NPN epitaxial silicon planar design transistors suitable for general purpose amplifier applications. These devices are lead-f...
....5 A.Product Attributes Brand: JSMICRO Semiconductor Model: S8050 Type: NPN Silicon General Purpose Transistor Complementary to: S8550Technical Specifications Parameter Symbol Ratings Unit Test Conditions Co...
... of up to 1500 mAdc. It is suitable for general-purpose applications and features an NPN complement, the LH8050. A Pb-Free package option is available, and the 'S-' prefix denotes suitability for Automotive ...
... RADIO COMPANY, LTD. L8050H series are NPN Silicon General Purpose Transistors designed for high current capacity in a compact SOT-23 package. These epitaxial planar type transistors offer an IC of 1.5 A and...
... L8050H series are NPN Silicon General Purpose Transistors designed for high current capacity in a compact SOT-23 package. These epitaxial planar type transistors offer an IC of 1.5 A and are available in Pb...
...Transistors The LBC817 series are NPN silicon general purpose transistors designed for a wide range of applications. They offer reliable performance in various operating conditions. Product Attributes Brand:...
...NPN Silicon Epitaxial Planar Transistor designed for applications requiring high collector current. It offers excellent HFE linearity and features a continuous collector current of 500mA and a power dissipat...
... pick-and-place costs. This device is suitable for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in...
...transistor featuring built-in biasing resistors (R1 = 47k, R2 = 22k) that simplify circuit design by eliminating the need for external input resistors. This NPN transistor is designed for inverter, interface...
...Transistor Tester Multimeter Display TFT For Diode Triode MOS/PNP/NPN Capacitor Resistor Tr Product Description: This is a cost-efective and widely used transistor detector. (an be used to detect NPN and PNP...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
... resistor network. Each BRT integrates a single transistor with a base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. This series is designed ...
PRODUCT DESCRIPTION 8542.39.0001 Triode NPN PNP Transistor Circuit Protection TPD2S300YFFR NPN PNP Transistor Texas Instruments/TI TPD2S300YFFR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Stat...
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching a...
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching a...