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Product Overview The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise ......
Product Overview The BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characte...
Product Overview The BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a ......
Product Overview The SMBTA06/MMBTA06 is an NPN Silicon AF Transistor designed for general-purpose amplification. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant), qualified...
Product Overview The FMMT491 is an NPN Silicon Epitaxial Planar Transistor designed with improved VCE(sat) and reverse blocking specifications. It is suitable for various electronic applications requiring high ...
Product Overview The MMBTA05/MMBTA06 are NPN general-purpose bipolar transistors designed for various applications. They offer reliable performance with key electrical characteristics and are housed in a compac...
Product Overview The BC846/BC847/BC848 series are NPN general purpose bipolar transistors designed for a wide range of applications. They offer reliable performance in various electronic circuits.Product Attrib...
Product Overview The LBTN880DPTUG and S-LBTN880DPTUG are NPN Silicon Power Transistors designed for surface mount applications. They feature lead formed for plastic sleeves and are RoHS compliant and Halogen Fr...
Product Overview Dual General Purpose Transistors (NPN/PNP Complimentary) designed for general purpose amplifier applications. Housed in the SOT363/SC88 package, ideal for low power surface mount applications.P...
Product Overview These NPN dual general-purpose transistors are designed for amplifier applications and are housed in the SOT363/SC88 package, suitable for low-power surface mount applications.Product Attribute...
Product Overview Dual General Purpose Transistors (NPN/PNP Complimentary) designed for general purpose amplifier applications. Housed in the SOT363/SC88 package for low power surface mount ......
Product Overview The L2SC4617QT1G Series are NPN silicon general-purpose transistors designed for various applications. They offer reliable performance with absolute maximum ratings and electrical characteristi...
Product Overview The L2SC1623SWT1G and L2SC1623SWT3G are NPN Silicon General Purpose Transistors manufactured by Leshan Radio Company, LTD. These devices are designed for general-purpose applications and comply...
Product Overview This Silicon NPN Darlington Power Transistor offers low collector saturation voltage and high DC current gain, ensuring high reliability and minimum lot-to-lot ......
Product Overview The 2SC2712 is a silicon NPN epitaxial bipolar transistor, first produced in October 1982. It is designed for low-frequency amplifiers, audio frequency general-purpose amplification, and AM amp...
Product Overview The DTC124EE is a digital transistor (NPN) featuring built-in bias resistors. This integration simplifies circuit design by eliminating the need for external input resistors, enabling inverter ...
Product Overview The DDC(XXXX)U is an NPN pre-biased small signal dual transistor designed for surface mounting. It features epitaxial planar die construction, built-in biasing resistors, and complementary PNP ...
Product Overview The ADC124EUQ is an NPN pre-biased dual transistor in a SOT363 package. It features epitaxial planar die construction and built-in biasing resistors (R1, R2 typically 22k). This device is ......
Product Overview The DDC(XXXX)U is an NPN pre-biased small signal dual transistor in a surface mount package. It features epitaxial planar die construction, built-in biasing resistors, and complementary PNP typ...
Product Overview The ADC114EUQ is an NPN pre-biased dual transistor in a SOT363 package. It features epitaxial planar die construction and built-in biasing resistors (R1 and R2, typically 10k each). This device...