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...-Source Breakdown Voltage (Vds): 100V • Gate-Source Voltage (Vgs): +/- 20V • Continuous Drain Current (Id): 34A • Power Dissipation (Pd): 143W • Rds(on): 0.028 Ohm • Threshold Voltage (Vth): 4V • Operating T...
...Power MOSFET Parameters: •Voltage: 55V •RDS(on): 0.13 Ohm •ID: 17A •Package: TO-252 •Configuration: Single •Mounting Type: Through Hole •Drain to Source Voltage (Vdss): 55V •Gate to Source Voltage (Vgs): 20V...
... drain-source voltage and +/-20V gate-source voltage. It has an on-resistance of 0.14 Ohms and is ideal for applications such as motor control, power switching and voltage regulation. Parameters: - Peak Drai...
... Power Electronics High Performance High Efficiency Low On Resistance Parameters: - Drain-Source Voltage: 100V - Continuous Drain Current: 70A - On-Resistance RDS(on): 0.02 Ohm - RDS(on) Test Voltage: 5V - G...
Product Listing: Product Name: SPA11N80C3 MOSFET Parameters: Drain-Source Voltage: 800V Continuous Drain Current: 11A RDS(on): 0.0085 Ohm Gate-Source Voltage: 20V Pulsed Drain Current: 95A Operatin...
...Id, Vgs: 4.2 Ohm Voltage-Gate Source (Vgs) Threshold: 4.5V Power-Dissipation (Pd) @ Tc: 125W Operating Temperature Range: -55°C to 175°C Mounting Style: Through Hole Manufacturer: Infineon Technologies Why ....
...: N-Channel • Power Dissipation (Max): 16.5 W • Transistor Case Style: TO-220AB • Continuous Drain Current (Id): 11 A • No. of Pins: 3 • Operating Temperature ......
...Power Electronics High Performance Durable Design for Your Application Product Type: MOSFET Part Number: IRF540NSTRLPBF Package Type: TO-220 Configuration: N-Channel Voltage Rating (VDSS): 100 V Continuous D...
...Power Electronics Applications Product Features: -60V Drain-Source Breakdown Voltage -Typical Output Capacitance: 790pF -Typical Gate Charge: 34nC -RDS(on) = 0.19 Ohm -Maximum Continuous Drain Current: 35A -...
...a maximum drain-source voltage of 400V with a drain current of 43A. This MOSFET also features a low on-state resistance of 0.0035 Ohms, and a maximum power dissipation of 54W. The IRFS4115TRL7PP is ideal for...
...: IRLB4132PBF HEXFET Power MOSFET Product Type: MOSFET Package Type: TO-220 Vds - Drain-Source Breakdown Voltage: 55V Rds On - Drain-Source Resistance: 4.7 Ohms Id - Continuous Drain Current: 55A Vgs - Gate-...
Product Listing: IRFB260NPBF N-Channel Power MOSFET Voltage: 100V Current: 22A Drain-Source On-Resistance: 0.98 Ohm Gate Charge: 16nC Power Dissipation: 4.2W Package: TO-220AB Polarity: N-Channel Why buy from u...
...Power Electronics Solution for High Current Applications Parameters: • Package: TO-220 • Transistor Type: N-Channel • Vds – Drain-Source Breakdown Voltage: 100V • Id – Continuous Drain Current: 25A • Rds On ...
Product Listing: IRFB4310PBF - N-Channel MOSFET Product Type: N-Channel MOSFET Package Type: TO-220AB Drain Current: 57A Drain Source Voltage: 100V Rds On: 0.040 Ohms VGS: 20V Power Dissipation: 131W Operating...
... • Power - Max: 320W • Operating Temperature: -55°C to 175°C (TJ) • Mounting Type: Through Hole • Package / Case: TO-220AB Why buy from us >>> Fast / ......
...Gate-Source Voltage (Vgs): 20V • Drain-Source On-State Resistance (Rds): 0.068 ohm • Operating Temperature: -55C to +150C • Transistor Polarity: N-Channel • Package/Case: TO-220AB • Mounting Type: Through Ho...
...designed for applications such as DC/DC converters, AC/DC rectifiers and power management. With an Rds(on) of 0.28 Ohm and a package size of 2.8mm x 3.3mm x 0.9mm, this MOSFET is optimized for a low on-resis...
IPW60R037CSFD High Power MOSFET for Greater Efficiency and Reliability Product Listing: IPW60R037CSFD MOSFET - Package: TO-263 - VDSS: 60V - RDS(on): 0.037 Ohm - ID: 70A - Power dissipation: 30W - Pulsed Drain ...
...0V • Operating Temperature Range: -55°C to +175°C • Mounting Type: Through Hole • Transistor Type: MOSFET N-Channel • Power Dissipation: 75W • Voltage - Supply: - • Gate Charge: 75nC • FET Feature: Standard ...
...power and Current handling capability • Easy to use Product Parameters: • Drain-Source Voltage (VDS): -30V to -100V • Continuous Drain Current (ID): -10A • Gate-Source Voltage (VGS): -2.5V to -5V • RDS(on): ...