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FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 The FMMT560 is a 500V PNP high voltage transistor in a SOT23 package. It offers a continuous collector current of up to -150mA and peak pulse current up to -500...
...a PNP SOT-323 transistor ideally suited for automatic insertion. It features an axial planar die construction and has a complementary NPN type available (BC817). This transistor is designed for various elect...
... is a PNP Silicon General Purpose Transistor from LESHAN RADIO COMPANY, LTD. It features high current capacity in a compact SOT-23 package, with a continuous collector current of up to -1500 mAdc. This epita...
... linearity, high hFE, low noise, and a small package. It is complementary to the 2SC4117.Product Attributes Brand: TOSHIBA Type: Silicon PNP Epitaxial Transistor Process: PCT process Package:...
DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR The DDTA (R1 = R2 SERIES) CA is a PNP pre-biased small signal surface mount transistor featuring epitaxial planar die construction a...
...PNP Waterproof Proximity Switch , Inductive Type Sensor Two - Wire Description · Lag distance:Less than 10% of the detection distance · Model: LJ30A3-15-Z/DX · Supply voltage: DC 12~24 (6~36V) pulse (p-p) be...
NPN / PNP Electronic Proximity Switch , Miniature Inductive Proximity Sensor Description An inductive proximity sensor is a non-contact electronic proximity sensor. It is used for positioning and detection of m...
...PNP Safety Proximity Switch , Inductive Prox Sensor Normally Closed Description As a market leader, Zhongde offers innovative, high quality safety inductive sensors to meet the needs of the worldwide automat...
...PNP Waterproof Proximity Switch , Inductive Type Sensor Two - Wire Description · Lag distance:Less than 10% of the detection distance · Model: LJ30A3-15-Z/DX · Supply voltage: DC 12~24 (6~36V) pulse (p-p) be...
NPN / PNP Electronic Proximity Switch , Miniature Inductive Proximity Sensor Description An inductive proximity sensor is a non-contact electronic proximity sensor. It is used for positioning and detection of m...
...PNP Safety Proximity Switch , Inductive Prox Sensor Normally Closed Description As a market leader, Zhongde offers innovative, high quality safety inductive sensors to meet the needs of the worldwide automat...
...Switch 3 Wires PNP NO Inductive Switch Product details standard shell/shield; F3C-08KS01-N R2M NPN.NO 1mm 8×8×1(iron) φ3×2M/3-wires F3C-08KS01-N2 R2M NPN.NC F3C-08KS01-P R2M PNP.NO F3C-08KS01-P2 R2M PNP.NC s...
...Switch 3 Wires PNP NO Inductive Switch Product details standard shell/shield; F3C-08KS01-N R2M NPN.NO 1mm 8×8×1(iron) φ3×2M/3-wires F3C-08KS01-N2 R2M NPN.NC F3C-08KS01-P R2M PNP.NO F3C-08KS01-P2 R2M PNP.NC s...
PRODUCT DESCRIPTION 8542.39.0001 Triode NPN PNP Transistor Circuit Protection TPD2S300YFFR NPN PNP Transistor Texas Instruments/TI TPD2S300YFFR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Stat...
...PNP Power Transistor from ISC, designed for power amplifier applications. It features a collector-emitter breakdown voltage of -50V, good linearity of hFE, and is a complement to type 2SC4935. Its robust dev...
... PNP amplification.Product Attributes Device Marking: SS8550=Y2 Datasheet Version: Rev.-2.0 Manufacturer: www.yongyutai.comTechnical Specifications ......
... planar type construction and offers a PNP complement to the L8550H. This device is suitable for various applications and is available with AEC-Q101 qualification and PPAP capability for automotive and other...
Product Detail Product Category: Bipolar Transistors Mounting Style: Through Hole Transistor Polarity: PNP Configuration: Single Emitter Voltage VCEO Max: - 140 V Base Voltage VCBO: - 140 V Emitter- Base Voltag...
...transistors, integrating both NPN (DTr1) and PNP (DTr2) transistor chips within a single package. These devices are designed for applications requiring compact solutions, offering halved mounting costs and a...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...