| Sign In | Join Free | My burrillandco.com |
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
... Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K APPLICATIONS ·Designed for use in audio amplifier and switching, especi...
Product Detail Packaging Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, ......
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, ......
Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector...
Product Detail Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 150mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector...
...PNP Plastic-Encapsulated Transistor designed for general-purpose applications. It offers high stability and reliability, making it suitable for various electronic circuits. This transistor is complementary t...
...PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features epitaxial planar die construction and is recommended as a complementary type to the NPN transistor MMBT3904. Its c...
...PNP epitaxial planar die construction transistor in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package with tape/reel packing options. This t...
...PNP epitaxial planar die construction transistor in a SOT-23 small outline plastic package. It is a complementary type to the NPN transistor PMBT3904. This product is halogen-free and RoHS compliant, offerin...
...PNP pre-biased small signal surface mount transistor featuring epitaxial planar die construction and built-in biasing resistors (R1 = R2). It is a totally lead-free, fully RoHS compliant, and Halogen and Ant...
...PNP Silicon Surface Mount Transistors featuring a Monolithic Bias Resistor Network (BRT). These devices are designed to replace single transistors with external resistor bias networks, integrating a base res...
... current range, contributing to high-quality audio output. This transistor is complementary to the 2SC6145 and is classified as a Linear Amplifier Power Transistor (LAPT) with a high transition frequency. Pr...
...PNP Photocell Sensor Switch Optical Through Type Main features: 1 . high precision of repeated location 2 . Diversified exterior structures 3 . Many output forms 4 . High on-off frequency 5 . Dust proof,vibr...
Product Description Packaging Tube/Bulk Part Status Active Type PNP Operating Temperature -55C ~ 175C (TJ) Mounting Type Through Hole Supplier Device Package TO-126 Yonlanda Skype: qyt-yolanda1 Email: yonland...
...lead-free construction. This transistor is the complimentary type to the SS8050, offering a collector current of up to 1.5A and a collector power dissipation of 1W at 25 (TO-92 package). Product ......
Product Overview The SS8550-TA is a complementary PNP bipolar transistor designed for general-purpose applications. It features high collector current capability and is complementary to the SS8050 NPN transisto...
...BC856S/U and BC857S are PNP Silicon AF Transistor Arrays designed for AF input stages and driver applications. They offer high current gain, low collector-emitter saturation voltage, and feature two internal...