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...Power MOSFET for Power Electronics Applications IRFB3306PBF Power MOSFET Parameters: VDS - 100V ID - 30A RDS(on) - 0.0088 ohm Manufacturer: International Rectifier Package Type: TO-220 Maximum Gate Threshold...
...Power Electronics High Efficiency High Current and Low On Resistance Product Description The IRFBC20PBF is a N-Channel Power MOSFET from International Rectifier. This power MOSFET features a maximum drain-so...
...Power Electronics High Power and Low On-Resistance for Maximum Efficiency Product Description: This is an N-Channel enhancement mode silicon gate power field effect transistor with an integral source-drain d...
...Power Low Voltage Power Electronics Solution Description: The IRFS7537TRLPBF is a N-Channel HEXFET Power MOSFET from International Rectifier. This device is designed to deliver the highest efficiency, reliab...
...Power Electronics High Performanc Fast Switching Low Loss Power Conversion Product Listing: Product Name: IRLB3813PBF MOSFET Transistor Description: The IRLB3813PBF is a N-Channel Power MOSFET transistor fro...
SI7115DN-T1-GE3 MOSFET Power Electronics High Power And Low On Resistance For Robust Power Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuo...
...Power Electronics High Power High Efficiency Switching Features: • N-Channel Enhancement Mode • Low On-Resistance RDS(on) • Fast Switching Speed • Improved Gate Charge x RDS(on) Product • RoHS Compliant Spec...
IRLR2908TRPBF MOSFET Power Electronic Transistor High Performance Reliable and Efficient Power Solution Product Listing: IRLR2908TRPBF Power MOSFET Features: - N-Channel MOSFET - Low Gate Charge - Fast Switchin...
... Drain Current (Id): 8 A • Drain-Source On-State Resistance (Rds): 0.06 ohm • Maximum Junction Temperature (Tj): 150°C • Power Dissipation (Pd): 14 W • Mounting Type: Through Hole • Number of Elements: 1 •...
...state resistance. It is suitable for applications such as high-speed switching, motor control, switching power supplies, and other power management applications. Product Features: • Maximum Drain Source Volt...
...device with a low gate charge for high efficiency, low power loss and fast switching. Specifications: - Drain-Source Voltage: 100V - Drain Current: 34A - Gate Threshold Voltage: 4V - RDS(on): 0.042 Ohm - Inp...
... device is a high-performance transistor that can handle up to 100V and has a maximum current rating of 22A. It is suitable for use in a variety of applications, including power conversion, motor control, an...
...-Source Voltage: 500V • Continuous Drain Current: 7.5A • Drain-Source On-Resistance: 0.028Ω • Gate-Source Voltage: ±20V • Power Dissipation: 16W • Operating Temperature Range: -55°C to +150°C • Storage Tempe...
IRF7319TRPBF MOSFET High-Power High-Speed Switching for Power Electronics Applications Description: This MOSFET is a N-channel HEXFET Power MOSFET with low gate charge and low on-resistance. Features: Dynami...
...Power Electronics High Performance Low Loss High Current Switching. Description: The IRGB4062DPBF is a N-channel MOSFET, housed in a TO-252 package. It is designed for use in a variety of applications, inclu...
SPW20N60C3 MOSFET Power Electronics High-Performance Low Loss Switching for High Power Applications Package Type: TO-220 Maximum Drain Source Voltage (Vds): 600V Maximum Gate Source Voltage (Vgs): ±20V Drain Cu...
... RDS(on)@25°C: 0.032Ω • Gate-Source Voltage: ±20V • Power Dissipation: 600W • Operating Temperature Range: -55°C to 150°C • Mounting Type: Through Hole • Package / Case: TO-247-3 Why buy from us >>> Fast / ....
..., low on-resistance and high power handling capability. This device is ideal for switching applications, including motor control and power conversion. Product Specifications: • Drain-Source Voltage (Vdss): 1...
...MOSFET Power Electronics High Efficiency and Reliability for Your Power Applications 1. Product Name: IRFP064VPBF MOSFET 2. Package Type: TO-220 3. Maximum Drain Source Voltage: 500V 4. Continuous Drain Curr...
... Source Voltage (VDS): 100V - RDS(on): 0.045Ω - Gate-Source Voltage (VGS): 20V - Drain Current (ID): 33A - Power Dissipation (PD):...