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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. T...
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in auto...
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) Trench IGBT Technology Low Switching Losses ...
TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD ......
... Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ = 175℃)b TC = 25℃ ID 30 A TC=100℃ ......
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) ...
...Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other ap...
... is offered in a 20-pin, 5mm x 5mm TQFN package, resulting in substantial board-space savings. The MAX4896 8-channel relay driver offers built-in inductive kickback protection, drive for latching/nonlatching...
... is offered in a 20-pin, 5mm x 5mm TQFN package, resulting in substantial board-space savings. The MAX4896 8-channel relay driver offers built-in inductive kickback protection, drive for latching/nonlatching...
...Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style: Through Hole ...
...Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style: Through Hole ...
...Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style: Through Hole ...
...Power MOSFET N-CH 500V 24A TO-247 Distinctive Characteristics : Part No: IXTH460P2 Description: PolarP2 Power MOSFET N-CH 500V 24A TO-247 Product Category: MOSFET Technology: Si Mounting Style: Through Hole ...
... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK...
... for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ...
...Driver Isolated Gate Drivers Description LMG3422R030RQZR GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. LM...
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
... speed drives. It integrates power and control components to enhance reliability, reduce PCB size, and lower system costs. Key features include TRENCHSTOP IGBTs, rugged SOI gate driver technology with excell...
.... It features N-channel MOSFET technology, with a maximum voltage rating of 100V and a maximum drain current of 30A. It has an on-resistance of 0.0022Ω and a fast switching speed of 5.8ns. This device has a ...
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Fast Switching Speed ▼ PDIP-8 Package N-CH BVDSS 35V RDS(ON) 25mΩ ID 7A P-CH BVDSS -35V RDS(ON) 40mΩ ID -6.1A Description Advanced Power MOSFETs...