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...Free Product Specifications: • Drain-Source Voltage: 100V • Gate-Source Voltage: ±20V • Drain Current: 45A • Continuous Drain Current: 45A • Power Dissipation: 120W • Operating Temperature: -55 to 150 Degree...
...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized...
BTN7970B MOTOR DRIVER 8V-18V Power MOSFET Parallel PG-TO263-7 Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power Stage Output Configuration Half Bridge Interface Parallel Techn...
BTN7970B MOTOR DRIVER 8V-18V Power MOSFET Parallel PG-TO263-7 Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power Stage Output Configuration Half Bridge Interface Parallel Techn...
...MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functi...
...MOSFET Power Electronics Product Specifications • Transistor Polarity: N-Channel • Maximum Drain Source Voltage: 40V • Maximum Gate Source Voltage: ±20V • Maximum Drain Current: 80A • Rds On (max) @ Id, Vgs:...
.../ns - Optimized for High Temperature Operation - Halogen-free - RoHS Compliant Specifications: - Drain-Source Voltage: -20V to +60V - Gate-Source Voltage: ±20V - Drain Current: 18A - Power Dissipation: 4.2W ...
...Power MOSFET Product Description Of SCT4026DW7HRTL SCT4026DW7HRTL is Low on-resistance Automotive Grade N-channel SiC power MOSFET Transistors. Specification Of SCT4026DW7HRTL Part Number: SCT4026DW7HRTL Pa...
..., driving N-channel MOSFETs and IGBTs in a half-bridge configuration. The high voltage process enables the LF2136B high sides to switch up to 600V in a bootstrap operation. LF2136B ......
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Descripti...
... also reducing internal capacitance and gate charge for faster and more efficient switching. Features : 100% avalanche tested Ultra low on-resistance Distinctive Characteristics : Part No: STP15810 Descripti...
... Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability General Description This N-Channel MOSFET is produced using Fairchild Semic...
...Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulti...
Gate Drivers LMG3425R030RQZR GaN FET with integrated driver and ideal diode mode VQFN54 Description LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power den...
...driver for optimized performance. The module features a high-side MOSFET optimized for fast switching and low duty cycles, and a low-side MOSFET with ultra-low ON resistance for minimal conduction loss. It s...
...MOSFET Power Electronics Product Description: The IRFS7534TRLPBF is a 100V N-Channel MOSFET with a low RDS(on) for high efficiency power switching applications. This device offers both superior performance a...
...Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These feat...
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v...
...MOSFET Power Electronics Features: • N-Channel, Enhancement Mode • Low On-Resistance • High-Speed Switching • Low Gate Charge • Low Input and Output Capacitance • Easy to Drive Specifications: • Drain-Source...
... switching speed due to low internal gate resistance. Specification Of MSC040SMA120B Part Number MSC040SMA120B Gate Charge (Qg) (Max) @ Vgs 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 1000 V...