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...Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities ...
LP2950/LP2951 Series of Adjustable Micropower Voltage Regulators General Description The LP2950 and LP2951 are micropower voltage regulators with very low quiescent current (75A typ.) and very low dropout volt...
FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Qg(tot) = 84nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode UIS ...
T4 Series 4A TRIACS Main Features Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 5 to 35 mA DESCRIPTION Based on STs Snubberless / Logic level technology providing high commutation performances,...
TC4428COA 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS 12v led circuit board FEATURES High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V ...
IRF7601 HEXFET® Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (<1.1mm) • Available in Tape & Reel • Fast Switching Description Fifth Generation HEXFETs from International ......
SUM110P06-07L P-Channel 60-V (D-S) 175 MOSFET FEATURES TrenchFET Power MOSFET New Package with Low Thermal Resistance APPLICATIONS Automotive 12-V Boardnet High-Side Switches Motor Drives ABSOLUTE ...
TN12, TS12 and TYNx12 Series SENSITIVE & STANDARD 12A SCRS Main Features Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA DESCRIPTION Available either in sensitive (TS12) or standard (TN1...
TC74VHC11FT TRIPLE 3-INPUT AND GATE low cost audio amplifier Triple 3-Input AND Gate The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the ...
SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate ......
FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50...
FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50...
...Power MOSFET Transistors SCT018H65G3AG SIC Integrated Circuit Chip HU2PAK-7 Product Description Of SCT018H65G3AG SCT018H65G3AG is 650V, 55A Automotive-grade silicon carbide Power MOSFET Transistors, High sp...
MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping MMBT4401LT1 SOT23 (PbFree) 3,000 / Tape...
NV6012C GaN IC High Performance 650V Enhancement GaNFast™ Power FET Transistors High-performance 650V enhancement mode GaNFast™ power FET transistors designed for efficient power conversion applications. MJD Ad...
NV6015C GaN IC 150mΩ Enhancement GaNFast™ Power FET Transistors For TV SMPS High-performance GaNFast™ Power FET transistors specifically designed for TV Switch Mode Power Supplies (SMPS), featuring 150mΩ enhanc...
GENERAL PURPOSE APPLICATION. FEATURES High Current. (Max. : -1.5A) DC Current Gain : hFE=40Min. @IC=-0.15A Complementary to BD139. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Vol...
...UHF power LDMOS transistor Description: Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. App...
...Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulti...
..., high-speed switching time of 1.0 s (typ.), and is housed in a small flat package. This transistor is complementary to the 2SA1213.Product Attributes Brand: TOSHIBA Type: Silicon NPN Epitaxial Transistor (P...