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Total 39252 products for power rf transistor Manufacture & Suppliers

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURE...

Anterwell Technology Ltd.
Guangdong,China

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AD8361ARMZ-REEL7 Rf Power Amplifier Transistor

...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors

PTFA18100 is a RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 �� 1880 MHz . Part NO: PTFA18100 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Ele...

Mega Source Elec.Limited
China

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45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard

...RF transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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PTF040551E Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz ERICSSON RF Power Transistors

PTF040551E IS A Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz. Part NO: PTF040551E Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months ......

Mega Source Elec.Limited
China

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PTF040551F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz ERICSSON RF Power Transistors

PTF040551F IS A Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz . Part NO: PTF040551F Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months ......

Mega Source Elec.Limited
China

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PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz ERICSSON RF Power Transistors

PTF081301F IS A Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz . Part NO: PTF081301F Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months ......

Mega Source Elec.Limited
China

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PTFA191001GL Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz ERICSSON RF Power Transistors

PTFA191001GL is a Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz . Part NO: PTFA191001GL Brand: ERICSSON Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source El...

Mega Source Elec.Limited
China

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PTFB201602F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz ERICSSON RF Power Transistors

PTFB201602F is a Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 �� 2170 MHz . Part NO: PTFB201602F Brand: ERICSSON Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source El...

Mega Source Elec.Limited
China

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FDV303N Digital FET N-Channel MOSFET N-CH 25V 680MA SOT23 RF Transistors

FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Nu...

Wisdtech Technology Co.,Limited
Guangdong,China

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IRF1407PBF N-Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors

...Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Pol...

Wisdtech Technology Co.,Limited
Guangdong,China

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JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors

...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NP...

Wisdtech Technology Co.,Limited
Guangdong,China

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MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors

MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) ...

ChongMing Group (HK) Int'l Co., Ltd
China

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Low noise figure RF transistor Infineon BFP196E6327HTSA1 designed for DECT PCN power amplifiers and broadband

... The BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power am...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Industrial grade Infineon BFP740FESDH6327XTSA1 NPN RF transistor featuring 21 dBm RF input power and 2 kV ESD protection

... NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high RF performance and robustness, with a maximum RF input power of 21 dBm and 2 kV ESD...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Low noise figure silicon bipolar RF transistor Infineon BFP196WH6327 for broadband amplifier and telecom

...noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Silicon bipolar RF transistor Slkor BFR360F designed for microwave low noise amplifiers and VHF UHF oscillator circuits

... silicon bipolar RF transistor designed for microwave low-noise amplifiers operating at low currents. It is suitable for DC power supply voltages between 3.3V and 5V and can be used in oscillator circuits up...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Power Rf Transistor

Total 39252 products for power rf transistor Manufacture & Suppliers

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

AD8361ARMZ-REEL7 Rf Power Amplifier Transistor

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors

45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard

150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio

150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio

PTF040551E Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz ERICSSON RF Power Transistors

PTF040551F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz ERICSSON RF Power Transistors

PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz ERICSSON RF Power Transistors

PTFA191001GL Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz ERICSSON RF Power Transistors

PTFB201602F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz ERICSSON RF Power Transistors

FDV303N Digital FET N-Channel MOSFET N-CH 25V 680MA SOT23 RF Transistors

IRF1407PBF N-Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors

MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors

Low noise figure RF transistor Infineon BFP196E6327HTSA1 designed for DECT PCN power amplifiers and broadband

Industrial grade Infineon BFP740FESDH6327XTSA1 NPN RF transistor featuring 21 dBm RF input power and 2 kV ESD protection

Low noise figure silicon bipolar RF transistor Infineon BFP196WH6327 for broadband amplifier and telecom

Silicon bipolar RF transistor Slkor BFR360F designed for microwave low noise amplifiers and VHF UHF oscillator circuits