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... range.The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • Hig...
NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURE...
...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ......
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
PTFA18100 is a RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 1880 MHz . Part NO: PTFA18100 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Ele...
FDV303N Digital FET N-Channel Onsemi RF Transistors Manufacturer: onsemi Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Nu...
...Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Pol...
...RF transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly...
...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NP...
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL ......
PTF040551E IS A Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz. Part NO: PTF040551E Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months ......
PTF040551F IS A Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 - 500 MHz . Part NO: PTF040551F Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months ......
PTF081301F IS A Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz . Part NO: PTF081301F Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months ......
PTFA191001GL is a Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz . Part NO: PTFA191001GL Brand: ERICSSON Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source El...
PTFB201602F is a Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 2170 MHz . Part NO: PTFB201602F Brand: ERICSSON Date Code: 09+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source El...
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Feat...
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) ...
Internally Clamped, Current Limited NChannel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gatetosource clamp for ESD protection and...
ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Ca...