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Wireless Communication Module A5G38H055NT4 125V Airfast RF Power GaN Transistor DFN-6 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guara...
Wireless Communication Module QPD0020 6GHz 35W 48V RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100...
A5G08H800W19NR3 GaN IC 112W Asymmetrical Doherty RF Power GaN Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
General Purpose Power Mosfet Transistor KSP2907A Equivalent PNP Amplifier Features • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means a Center Collector (...
SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET P...
...-075K9L 500000 YAGEO 1606 RES 0805 20K5 1% RC0805FR-0720K5 500000 YAGEO 1606 C.I LNK623PG 10000 POWER 1407 C.I STM32F030K6T6 10000 ST 1549 DIODO ES1J-E3/61T 180000 VISHAY 1642/EJ CAP 0603 ......
...Power Mosfet Transistor Integarted Circuts Chip Electronics ICs A part of stock list CAP 0603 150PF 50V CL10C151JB8NNNC 800000 SAMSUNG AC7502D CAP 0603 180PF 50V CL10B181KB8NNNC 800000 SAMSUNG AA20SEE RES 08...
71004SB Power Mosfet Transistor IC Chip China supplier Integared Circuit FEATURES • Wide supply voltage range of 1.2 to 3.6 V • In accordance with JEDEC standard no. 8-1A • Inputs accept voltages up to 5.5 V • ...
2SB1151-Y LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT high power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETE...
IPEX SMIPEX RF connector high power rf attenuator four generation for contacting wireless networks Product Details: Product name: DALEE RF Connector Secification: Four generation Type: Female Certification: ISO...
Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown ......
High Power Mosfet Transistors LNK306GN-TL Off Line Switcher IC LNK306GN-TL LinkSwitch-TN Family Lowest Component Count, Energy-Effi ......
High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpo...
Operational Amplifier Power Mosfet Transistor / general purpose mosfet LM741H , 500 mW General Description The LM741 series are general purpose operational amplifiers which feature improved performance over ind...
LD1117S12TR Power Mosfet Transistor Low Drop Fixed And Adjustable Positive Voltage Regulators Feature summary ■ Low dropout voltage (1V TYP.) ■ 2.85V ......
IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-232 ......
Positive Voltage Regulators Switching Power Mosfet Transistor L7805CP Internally Limited OUTPUT CURRENT TO 1.5A OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8.5; 9; 10; 12; 15; 18; 24V THERMAL OVERLOAD PROTECTION S...
High Power RF Connectors Surface Mount SMD UFL IPEX IPX Coaxial Connector Product Details: Product name: DALEE RF Connector Secification: one generation Type : Female Certification: ISO9001,UL,ROHS and the late...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...