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...SDRAM- PC100 SD 8Mx16-10 FBGA lead free EDS1216GABH-10-E Elpida 20000 booking SD 2Mx8-8 PC125 CL3 TSOP HY57V168010DTC-8 Hynix 3000 3 days SD 8Mx32-PC100 EDS2532AABH-1AR2-E Elpida 100000 booking DDR-400 DDR S...
...SDRAM- PC100 SD 8Mx16-10 FBGA lead free EDS1216GABH-10-E Elpida 20000 booking SD 2Mx8-8 PC125 CL3 TSOP HY57V168010DTC-8 Hynix 3000 3 days SD 8Mx32-PC100 EDS2532AABH-1AR2-E Elpida 100000 booking DDR-400 DDR S...
...SDRAM- PC100 SD 8Mx16-10 FBGA lead free EDS1216GABH-10-E Elpida 20000 booking SD 2Mx8-8 PC125 CL3 TSOP HY57V168010DTC-8 Hynix 3000 3 days SD 8Mx32-PC100 EDS2532AABH-1AR2-E Elpida 100000 booking DDR-400 DDR S...
...architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR SDRAM effectively consists of a single 2n-bit-wide, one-clockcycl...
... devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR SDRAM, also known as mDDR (Mobile DDR SDRM), is a communication standard developed by the US JEDEC Solid State Technology Association (JEDE...
... Factor External - modular - 3U Dimensions (WxDxH) 43.8 cm x 40.6 cm x 13.3 cm Weight 15.9 kg RAM 256 MB (installed) / 1 GB (max) - DDR SDRAM Flash Memory 64 MB (installed) / 512 MB (max) Data Link Protocol ...
... Voltage-Supply 2.3 V ~ 2.7 V Supplier-Device-Package 66-TSOP II Memory Capacity 512M (32M x 16) Memory-Type DDR SDRAM Speed 200MHz Format-Memory RAM...
MT46V32M16CV-5B IT:J Specifications Part Status Active Memory Format RAM Memory Type DDR SDRAM Memory Size 512M (32M x 16) Speed 200MHz Interface Parallel Voltage - Supply 2.5 V ~ 2.7 V Operating Temperature -4...
...DDR concept. The demand for higher data rates and larger data densities lead to the evolution of SDR into the DDR. In the DDR SDRAM, the data is clocked at both edges – positive as well as negative edge – wh...
...DDR concept. The demand for higher data rates and larger data densities lead to the evolution of SDR into the DDR. In the DDR SDRAM, the data is clocked at both edges – positive as well as negative edge – wh...
Product Details Mobile Low-Power DDR SDRAM Features VDD/VDDQ = 1.701.95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per cl...
Product Details Mobile Low-Power DDR SDRAM Features VDD/VDDQ = 1.701.95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per cl...
... Timer Specification CPU/GPU Soldered On board AMD® LX800 500M Hz CPU Memory Soldered On board 256M DDR SDRAM Storage 1...
...RAM: 192 Kbytes of TCM RAM (inc. 64 Kbytes of ITCM RAM + 128 Kbytes of DTCM RAM for time critical routines), Up to 864 Kbytes of user SRAM, and 4 Kbytes of SRAM in Backup domain • Dual mode Quad-SPI memory i...
... ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and ...
...SDRAM 288-PIN DIMM RAM FOR IBM SERVER SPECIFICATIONS: Type:DDR4 SDRAM Bus Speed:PC4-19200 Form Factor:DIMM Number of Modules:1 Capacity per Module:16GB Number of Pins: 288 Product Name 16GB 1X16GB 4RX4 PC3L-...
...DDR EMMC MT41K256M16TW-107 I MT41K256M16TW-107 IT:P DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an i...
... Voltage-Supply 1.7 V ~ 1.9 V Supplier-Device-Package 60-FBGA (8x10) Memory Capacity 512M (64M x 8) Memory-Type DDR2 SDRAM Speed 400MHz Format-Memory RAM Descriptions SDRAM - DDR2 Memory IC 512Mb (64M x 8) P...
... Voltage-Supply 3 V ~ 3.6 V Supplier-Device-Package 90-TFBGA (8x13) Memory Capacity 128M (4M x 32) Memory-Type SDRAM Speed 143MHz Format-Memory RAM Descriptions SDRAM Memory IC 128Mb (4M x 32) Parallel 143MH...
... Touch HD Resolution 1366x768 Intel Celeron/13/15/17 CPU Fanless/Fan 4G/8G/16G RAM DDR 3/DDR 3/DDR4 optional 64G/128G /256G SSD, 500G HDD Msata/Sata optional product form Size 18.5 ......