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Random Access Memory Ram

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Total 15076 products for random access memory ram Manufacture & Suppliers

AS7C1024B-12TJCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C1024B-12JCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...

Sanhuang electronics (Hong Kong) Co., Limited
China

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FM24CL64B-GTR 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention

... 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention Features ■ 64-Kbit ferroelectric random ...

TOP Electronic Industry Co., Ltd.
China

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FM25CL64B-GTR 64Kb Serial F-RAM with 20MHz SPI No-Delay Writes 10^14 Endurance 151-Year Data Retention 2.0-3.6V Operation -40°C to +85°C and Small SOIC Package

... memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data ......

TOP Electronic Industry Co., Ltd.
China

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Cheap Price Computer Hardware Laptop Notebook DDR3 4GB Memory Ram DDR4 DDR5

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Shanghai Apying Technology Co., Ltd.
Shanghai,China

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Memory IC Chip MT41K256M16TW-107 XIT:P 8Gbit SDRAM Mobile LPDDR4 Memory IC FBGA-96

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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FM25V10-GTR IC Chip Non Volatile Memory High Performance Data Storage

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AS7C316098A-10BIN IC SRAM 16MBIT PARALLEL 48TFBGA Alliance Memory, Inc.

...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256A-10TCN IC SRAM 256KBIT PAR 28TSOP I Alliance Memory, Inc.

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256A-12JCN IC SRAM 256KBIT PARALLEL 28SOJ Alliance Memory, Inc.

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C4096A-12JIN IC SRAM 4MBIT PARALLEL 36SOJ Alliance Memory, Inc.

... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple i...

Sanhuang electronics (Hong Kong) Co., Limited
China

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M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

ChongMing Group (HK) Int'l Co., Ltd
China

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Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-sp...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AS6C4016-55ZIN IC SRAM 4MBIT PARALLEL 44TSOP II Alliance Memory, Inc.

..., high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA(TYP.) Standby curren...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200

Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200 Product Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory

Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory Product Description Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic rand...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dyna...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E384M32D2FW-046 WT:E 12Gbit Parallel 2.133 GHz LPDDR4 Memory IC

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, L...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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