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Total 10000 products for random access memory ram Manufacture & Suppliers

NT5CB128M16JR-FL High-Speed Automotive DDR3 SDRAM Memory IC Chip 2Gb BGA96 Package

NT5CB128M16JR-FL Memory IC Chip High-Speed Automotive DDR3 2Gb SDRAM Memory IC Product Description Of NT5CB128M16JR-FL NT5CB128M16JR-FL DDR3 SDRAM is a high-speed dynamic random access memory internally configu...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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W66DP2RQQAGJ Memory IC Chip 8Gbit LPDDR4X SDRAM with 1.866 GHz Clock Frequency and 256M x 32 Organization

W66DP2RQQAGJ Memory IC Chip 8Gbit LPDDR4/LPDDR4X Combo SDRAM Memory IC TFBGA-200 Product Overview W66DP2RQQAGJ is a LPDDR4/LPDDR4X combo Synchronous Dynamic Random-Access Memory (SDRAM). It uses a 2 or 4 clocks...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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K4A4G165WE-BCRC 4Gb DDR4 SDRAM Memory IC Chip with 2400Mbps Data Rate in FBGA-96 Package

K4A4G165WE-BCRC Memory IC Chip 4Gb DDR4 Synchronous Dynamic Random Access Memory FBGA-96 Product Overview K4A4G165WE-BCRC is a 4Gb DDR4 SDRAM memory chip with a 256M×16 organization structure, widely used in co...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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K4A4G165WF-BCWE 4 Gb DDR4 SDRAM Memory IC Chip with 3200 Mbps Data Rate in FBGA-96 Package

K4A4G165WF-BCWE Memory IC Chip 4Gb DDR4 SDRAM FBGA-96 Synchronous Dynamic Random Access Memory Product Overview K4A4G165WF-BCWE is a 4 Gb DDR4 SDRAM synchronous double data rate memory chip featuring a 256M x 1...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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NOR Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip S70GL02GS11FHI010 2Gbit Parallel NOR Flash Memory Chip BGA-64

... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/51...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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H5PS5162FFR-G7C H5PS1G63JFR-Y5J H5TQ4G63CFR-TEC Flash Memory IC Chip

...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Ele...

Shenzhen E-Top Semiconductor equipment Co., Ltd
Guangdong,China

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Micron MT29F4G08ABBFAH4-IT MT46V64M8P-5B:J Flash Memory IC Chip

Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access mem...

Shenzhen E-Top Semiconductor equipment Co., Ltd
Guangdong,China

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8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip

8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip Product Description Of MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E The DDR4 SDRAM is a high-speed dynamic random-access m...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC

... Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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CXDB4CBAM-ML-A Memory IC Chip 8Gbit LPDDR4/4X Ultra-Low Power Double Data Rate DRAM

CXDB4CBAM-ML-A Memory IC Chip 8Gbit LPDDR4/4X Ultra-Low Power Double Data Rate Dynamic Random Access Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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256Mbit Integrated Circuit Chip S29GL256S90DHI020 FLASH NOR Memory IC FBGA64

...Memory IC FBGA64 Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fa...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AT24CS08-STUM-T 8 Kbit Serial EEPROM Memory for High Performance Data Storage

...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interfa...

Shenzhen Sai Collie Technology Co., Ltd.
China

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S29GL256S10DHB023 Memory IC Chip 256 Mbit NOR Flash Memory FBGA-64 Package

... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S29GL01GS10FHI010 Memory IC Chip 1Gbit Parallel MIRRORBIT™ Eclipse NOR Flash Memory IC

... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AM28F010-90PC - Advanced Micro Devices - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erase...

Mega Source Elec.Limited
China

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MX29LV040TC-55 - Macronix International - 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile ra...

Mega Source Elec.Limited
China

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MT41K128M16JT-125 IT:K High Performance Flash Memory Chips Unbeatable Speed and Reliability

...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns W...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AS4C2M32SA-6TCN IC DRAM 64MBIT PAR 86TSOP II Alliance Memory, Inc.

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanc...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Flash Memory IC Chip MT4LC4M16R6TG-5 - Micron Technology - DRAM

...-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4...

Mega Source Elec.Limited
China

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