Total 100000 products for rf power amplifier design Manufacture & Suppliers

• 100W RF Wifi Signal Power Amplifier Module with VSWR protection for 1560-1620MHz

  

  ...RF Wifi Signal Power Amplifier Module Wireless Signal Extender with VSWR protection for 1560-1620MHz Product Description YPM16100B is a wireless signal shielding module dedicated to 1560-1720MHz signal. This...

  Zhongshi Zhihui Technology (suzhou) Co., Ltd.

  Jiangsu,China

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• MW7IC2725NR1 F LDMOS Wideband Integrated Power Amplifiers FREESCALE Power Transistors RF

  

  ...Power Amplifier. Part NO: MW7IC2725NR1 Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave device...

  Mega Source Elec.Limited

  China

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• 300MHz-2700MHz RF Broadband Power Amplifier Module,10W 50W 100W Linear Power Amp for Communication, Testing & Jamming Systems

  

  ...RF Broadband High Power Amplifier for Signal Boost & Jamming Application 1.Product Introduction The TXH0327-PA100W power in the frequency range of 300MHz to 2700 MHz while maintaining relevant RF performance...

  Amplifier module

  Guangdong,China

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• High power wide band 300-2000mhz power amplifier module for anti drone WIFi system

  

  ...Power Wide Band 300-2000MHz Power Amplifier Module for Anti-Drone WiFi System Product Specifications Name 300-2000MHz Power Amplifier Output Power 100W Voltage 28-32V Application Anti-Drone System Connector ...

  Amplifier module

  Guangdong,China

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• MRF6VP3450HR5 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs FSL RF Power Transistors RF

  

  ...RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic...

  Mega Source Elec.Limited

  China

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• 50W RF Power Module LDMOS with N-Type Connectors for Anti-UAS Drone Jamming Systems

  

  ... module that acts as the "muscle" for a drone jammer (counter-UAS system). It takes a weak signal and boosts it to a powerful 50 Watts, then broadcasts it through an antenna to block, disrupt, and ...

  Amplifier module

  Guangdong,China

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• RFint 100% NEW Signal Power Amplifier 8dBm 2.5-7.2GHz RF Wireless Wifi With Buffer

  

  RFint 100% NEW 8dBm 2.5-7.2GHz RF Wireless Wifi Signal Power Amplifier with Buffer Product Description Operating Frequency 2.5GHz to 7.2GHz Pout ���8 dBm Harmonics 2nd ���-24dBc;Harmonics 3rd:���-25dBc Phase Noise ���-...

  Zhongshi Zhihui Technology (suzhou) Co., Ltd.

  Jiangsu,China

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• PTF102028 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor RF Power Transistors ERICSSON

  

  ...RF Power Transistors. Part NO: Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products ...

  Mega Source Elec.Limited

  China

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• RF Power Transistors MRF134 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FET

  

  ...150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency — 55% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at ......

  Mega Source Elec.Limited

  China

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• High-Power 120W Microwave Power Amplifier with 0.5–40 GHz Frequency Range and GaN Semiconductor Technology

  

  ... amplifiers support a wide range of frequencies from MHz up to 40 GHz. They are ideal for wireless communications, radar systems, aerospace applications, and precision test instruments. Available in broadban...

  Shaanxi Shinhom Enterprise Co.,Ltd

  Shaanxi,China

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• RF Power Transistors MRF9120 - Motorola, Inc - RF Power Field Effect Transistors

  

  ... gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. Applications: • Typical CDMA Performance @ 880 MHz, ...

  Mega Source Elec.Limited

  China

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• RF Power Transistors MRF15060S - Motorola, Inc - RF POWER BIPOLAR TRANSISTORS

  

  ...broadband performance of these devices makes them ideal for large–signal, common–emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi–carrier base station equipment. •...

  Mega Source Elec.Limited

  China

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• PTF181301A LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz ERICSSON RF Power Transistors

  

  ...RF Power Field Effect Transistor 130 W, 1805-1880 MHz . Part NO: PTF181301A Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws/mounting type Overview Mega Source Electronic Co., ...

  Mega Source Elec.Limited

  China

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• 5.8GHz 5W 10W 20W 30W 40W 50W Jammer RF Module for Power Amplifier

  

  ...RF Module for Power Amplifier The 5.8ghz PA RF module we always have different output power choices : 5W 10W 20W 40W 50W Price is different for each power All the parameters of PA can be customized depend on...

  Amplifier module

  Guangdong,China

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• RF LDMOS Wideband Integrated Power Amplifiers MD7IC2050N Original Freescale

  

  RF LDMOS Wideband Integrated Power Amplifiers MD7IC2050N Original Freescale Features ��� 100% PAR Tested for Guaranteed Output Power Capability ��� Production Tested in a Symmetrical Doherty Configuration ��� Charact...

  Mega Source Elec.Limited

  China

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• MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

  

  ...RF Power Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make the...

  Mega Source Elec.Limited

  China

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• MRF9060S - Motorola, Inc - 945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

  

  ...BROADBAND RF POWER MOSFETs Description: Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them idea...

  Mega Source Elec.Limited

  China

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• 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

  

  ...28V DC-4GHz High Electron Mobility GAN RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifica...

  Zhongshi Zhihui Technology (suzhou) Co., Ltd.

  Jiangsu,China

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• PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors

  

  ... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeater...

  Mega Source Elec.Limited

  China

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• RF Power Transistors MHW720A1 - Motorola, Inc - UHF Power Amplifiers

  

  ...470 MHz • Specified 12.5 Volt, UHF Characteristics — Output Power = 20 Watts Minimum Gain = 21 dB Harmonics = –40 dB (Max) • 50 Ω Input/Output Impedance Applications: • ......

  Mega Source Elec.Limited

  China

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