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1-2GHz , L-Band , RF Low Noise Amplifier LNA , RF Power Amplifier Module Model: VBP2GL VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequ...
5.1-5.2GHz RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provi...
RF Power Amplifier Module - 50W, 6-8GHz Professional 6-8GHz RF Module with 50W output power, designed for signal jamming, communication systems, and measurement applications. Product Overview This 6-8GHz RF Pow...
...power 100W RF power amplifier module counter UAV FPV TXtelsig high power 100W PA 1200-1500 MHz rf power amplifier module is a kind of customizable module .This power amplifier takes advance RF technology tha...
Tektronix TAP1500 RF Power Meter 1500 MHz Active Probe Single-Ended With TekVPI Interface Product Overview Tektronix TAP1500 1500 MHz Active Probe, Single-Ended; with TekVPI Interface - designed for high-perfor...
...power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitax...
...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...
...Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works f...
...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...
... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown voltage: 65 V Operating ...
...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...
... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown voltage: 65 V Operating ...
...-13GHz , Ku-Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency pow...
C-Band 5850-6425MHz RF Up converter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA...
2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power...
... of ≤-30dBc. Its operating temperature range is from -40℃ to +85℃ with a VSWR of 1.5:1. The connector type is SMA-F. This module is ideal for applications requiring high power and high reliability in...
...Power RF Power Amplifier 50dBm Gain LAN 2kg Weight Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF powe...
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high ...
... the interference of high radiated RF power to monitoring-unit and PA-Circuit; We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
...RF Power Amplifier for Electronic Warfare The 400-6000MHz 2W RF power amplifier is a high-performance, medium-power device suitable for various RF and wireless communication applications. Key features includ...