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... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
... per MIL-STD-202, Method 208 Weight: 0.08 ounces, 2.24 grams STOCK LIST TLC2272AIDR 7332 TI 15+ SOP-8 TLC2272CDR 13316 TI 15+ SOP-8 TLC2272CP 19536 TI 14+ SOP-8 ......
... solution for applications requiring accurate, low-noise amplification. This module offers excellent RF performance with a wide gain range of 30 to 40dB, gain flatness of ≤±0.5dB, noise figure of 2.5dB, VSWR...
...Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehi...
...RF Power Meter Description of 53147A Agilent RF Power Meter The Agilent 53147A is a full featured 20 GHz CW microwave frequency counter, a true power meter, and a dc DVM. It saves rack space in an ATE system...
...RF Power Sensor -60 to 20 dBm 10 MHz-18 GHz Plug-In Form Factor Product Overview The Keysight (Agilent) 8481A is a high-performance RF power sensor operating from 10 MHz to 18 GHz with a measurement range of...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited fo...
... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited fo...
... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
...Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” ...
IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr...
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs ......
... harmonic suppression of ≤-30dBc, input/output impedance of 50Ω, weight of 100g, spurious suppression of ≤-60dBc and VSWR of 1.5:1. Our RF Jammer Modules are designed for maximum performance and optimal effi...