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Rf Power Transistor List

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Total 49116 products for rf power transistor list Manufacture & Suppliers

30P06D TO-252 High Power Transistor , Custom Field Effect Transistor

...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for u...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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43A 200v Mosfet Power Transistor SMPS n channel IRFB38N20DPBF 3.8W 300W

...300W MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistor...

Shenzhen Huahao Gaosheng Technology Co., Ltd
China

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17a 55v 45w High Power Transistor Surface Mount IRFR024NTRPBF D Pak N Channel

...POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free St...

Shenzhen Huahao Gaosheng Technology Co., Ltd
China

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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Electronic Components Mosfet Power Transistor 30P03X TO-252 Standard Size

...Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Electronic Components Mosfet Power Transistor 30P03X TO-252 Standard Size

...Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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-30V/-50A Npn Power Transistor , Mosfet Driver Circuit Using Transistor

...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are l...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Original Complementary Power Transistors / Field Effect Transistor AP5N10LI

...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation wit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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-30V/-50A Npn Power Transistor , Mosfet Driver Circuit Using Transistor

...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are l...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Original Complementary Power Transistors / Field Effect Transistor AP5N10LI

...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation wit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog an...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and d...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog an...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and d...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

...Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

...Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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