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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance...
Small P Channel Mosfet High Side Switch / Low Power Transistor Long Life General Description The AOD413A uses advanced trench technology and design to provide excellent R DS(ON) with low gate ......
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Feat...
Lightweight and Compact EMI EMC Power Filter for Space Constrained Applications Product Description: Our RF Power Filter has a frequency range of DC to 40 GHz, making it suitable for a wide range of application...
...RF power amplifier module anti UAV drone system This is Independent research and development by Shen Zhen Texin Electronics Co.,Ltd no signal wide band 1700-2800MHz radio power amplifier module .It has stabl...
Internally Clamped, Current Limited NChannel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gatetosource clamp for ESD protection and...
...RF Power Divider Low VSWR 2.92 Female Connector 1 Advantages about rf power divider: 1. Low Insertion Loss, High power handling. 2. High quality, Low price, Fast delivery. 3. Custom design available upon re...
...reverse, they are also used as combiners by combining multiple signal into one.SHX-GF4-2 resistive power splitter is used in broad-band transmission and reflect coefficient test by separating signals in orde...
... power supplies Switching power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ...
... power supplies Switching power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ...
...RF Power Amplifier Module Technical Specifications: NO. Item Description Min Typical Max Unit 1 Frequency Band A B C D E 7.25 7.75 8.0 8.4 7.5 8.5 8.0 9.0 10.0 10.5 GHz 2 Gain Selectable 50 60 dB 3 Gain Flat...
...Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r...