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Total 39210 products for rf power transistors Manufacture & Suppliers

Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General

... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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FGH40N60SFD IGBT Power Transistor 600V 40A Field Stop Transistor TO-247-3 290W

FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor��s new series of Field Stop IGBTs offer the optimum performance for ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU

FGH60N60SFDTU Insulated Gate Bipolar Transistor 600V 60A 378W IGBT Transistors Applications �� Solar Inverter, UPS, Welder, PFC Specifications Product Attribute Attribute Value Product Category: IGBT Transistors...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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SPW24N60C3 MOSFET Power Transistor High Power High Efficiency Low On Resistance

...Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(O...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RD100HHF1 25A 12.5W Mosfet Power Transistor For HF High Power Amplifiers

...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium��power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing comple...

Anterwell Technology Ltd.
Guangdong,China

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550MHz COFDM 20W RF power amplifier

HN-PA20W_550:550MHz COFDM 20W RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjust...

Shenzhen Huanuo Innovate Technology co.,LTD.
Guangdong,China

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2G To 8G RF Power Divider Isolation 18dB 2 Way High Efficiency

... Range 2～8GHz Amplitude Balance ≤±2° VSWR ≤1.35:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.0dB(not Include Theory 3dB) Power Handling 20W Isolation ≥18dB Temperature Range -40℃～+70℃...

Charter Leader Precision Electronic Co.,Ltd
China

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0.5G To 6G 4 Way RF Power Divider Microwave SMA Connector

... Range 500MHz～6GHz Amplitude Balance ≤±6° VSWR IN≤1.5:1,OUT≤1.4:1 Phase Balance ≤±0.4dB Insertion Loss ≤2.8dB(not Include Theory 6dB) Power Handling 30W/2W Isolation ≥17dB Temperature Range -40℃～+70℃...

Charter Leader Precision Electronic Co.,Ltd
China

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High Frequency RF Power Divider 4 Way Resistive Splitter ODM

... Range 2～8GHz Amplitude Balance ≤±5° VSWR ≤1.45:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.2dB(not Include Theory 6dB) Power Handling 10W/2W Isolation ≥18dB Temperature Range -40℃～+70℃...

Charter Leader Precision Electronic Co.,Ltd
China

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2G To 8G RF Power Divider Isolation 18dB 2 Way High Efficiency

... Range 2～8GHz Amplitude Balance ≤±2° VSWR ≤1.35:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.0dB(not Include Theory 3dB) Power Handling 20W Isolation ≥18dB Temperature Range -40℃～+70℃...

Charter Leader Precision Electronic Co.,Ltd
China

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0.5G To 6G 4 Way RF Power Divider Microwave SMA Connector

... Range 500MHz～6GHz Amplitude Balance ≤±6° VSWR IN≤1.5:1,OUT≤1.4:1 Phase Balance ≤±0.4dB Insertion Loss ≤2.8dB(not Include Theory 6dB) Power Handling 30W/2W Isolation ≥17dB Temperature Range -40℃～+70℃...

Charter Leader Precision Electronic Co.,Ltd
China

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High Frequency RF Power Divider 4 Way Resistive Splitter ODM

... Range 2～8GHz Amplitude Balance ≤±5° VSWR ≤1.45:1 Phase Balance ≤±0.5dB Insertion Loss ≤1.2dB(not Include Theory 6dB) Power Handling 10W/2W Isolation ≥18dB Temperature Range -40℃～+70℃...

Charter Leader Precision Electronic Co.,Ltd
China

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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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MMBTA55 NPN Silicon Power Transistor SOT-23 Plastic Encapsulated Transistors

...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor

SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate ......

Anterwell Technology Ltd.
Guangdong,China

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6DI30A 120 Power Switching Transistor Si NPN Power Transistor 6 Channel

...Transistors 30A, 1200V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR Electrical Characteristics Collector Current-Max (IC) 30A Collector-emitter Voltage-Max 1200V Configuration COMPLEX DC Current Gain-Min (hFE) 70A ...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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TO-252Tip Power Transistors 3DD13002 Transistor NPN

...Transistors 3DD13002 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emit...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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3DD13003 NPN Transistor Circuit , NPN Power Transistor Collector Emitter Voltage 400V

...Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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1.25W NPN D882 Tip Power Transistors TO-251-3L Plastic - Encapsulated Transistors

...Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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