| Sign In | Join Free | My burrillandco.com |
|
SI4010-C2-GTR RF Power Transistor Product Features: 900 MHz to 2.7 GHz Frequency Range 10 W Output Power at 2.4 GHz 30 V Nominal Drain Voltage 6.8 dB Typical Gain at 2.4 GHz 56% Typical Efficiency at ...
SI1000-C-GM RF Power Transistor Features: • High gain • Low noise figure • High power output • Broadband performance • Low heat dissipation • No external ......
SI1000-E-GM2R RF Power Transistor Features: 500-1000 MHz Operating Frequency Range 28V Operating Voltage 10W Output Power 6 dB Gain High Efficiency Low Noise Low Distortion High Linearity Applic...
1. HMC8038LP4CETR RF Power Transistor 2. Features: - High Output Power: > +41 dBm at 1 GHz - High 3rd Order Intercept Point: > +50 dBm at 1 GHz - High Gain: > 18 dB at 1 GHz - Low Noise: < 0.5 dB at 1 GHz - Wid...
HMC8038LP4CETR RF Power Transistor Specifications: Frequency Range: DC - 6GHz Maximum Power Output: 28dBm Gain: 15.5dB Supply Voltage: 3.5V Operating Temperature: -55C to +150C P1dB Output Power: ...
Product: HMC442LC3BTR RF Power Transistors Description: The HMC442LC3BTR is a high gain, medium power GaN on SiC Heterojunction FET which is suitable for use in a wide range of applications including military, ...
HMC544AE RF Power Transistor Features: - High Output Power: 28 dBm Typical - High Gain: 14 dB Typical - Low Noise Figure: 2 dB Typical - Excellent Linearity - Wide Bandwidth: 600 MHz - RoHS Compliant Package: S...
HMC406MS8GETR RF Power Transistor Product Features: - Wideband operation from 0.1 to 6.0 GHz - High Gain: 15.5 dB at 0.9 GHz - High Output Power: 19.5 dBm at 0.9 ......
BGT24LTR11N16E6327XTSA1 RF Power Transistors Silicon Germanium 24GHz RadarTransceiver MMIC Frequency 24GHz ~ 24.25GHz Power - Output 6dBm Serial Interfaces - Voltage - ......
Quick Detail: VHF push-pull power MOS transistor Description: Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency r...
3DD5601I-O-I-N-B is a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Part NO: 3DD5601I-O-I-N-B Brand: FUJITSU Date Code: 0228+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic...
MMG3001NT1 is a Heterojunction Bipolar Transistor Technology (InGaP HBT). Part NO: MMG3001NT1 Brand: FSL Date Code: 118+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD...
MMG3002NT1 is a Heterojunction Bipolar Transistor Technology (InGaP HBT). Part NO: MMG3002NT1 Brand: FSL Date Code: 119+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD...
PRF7S38045 is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. Part NO: PRF7S38045 Brand: FSL Date Code: 183+ Quality War...
PRF8P20165WHS. is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. Part NO: PRF8P20165WHS. Brand: FSL Date Code: 189+ Qua...
PRF8P20165WHS. is a SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC. Part NO: PRF8P20165WHS. Brand: FSL Date Code: 189+ Qua...
PTB2015/R is a 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor. Part NO: PTB2015/R Brand: FSL Date Code: 366+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes...
PTF10160 is a 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor . Part NO: PTF10160 Brand: FSL Date Code: 367+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD speci...
...RF heterojunction bipolar transistor (HBT) designed for high-performance applications. It offers a low noise figure, high gain, and excellent linearity, making it suitable for a wide range of wireless commun...
... of high-end RF performance and robustness, including high input power handling and ESD hardness. Its high transition frequency enables excellent noise performance across various frequencies. This transistor...