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Total 7131 products for rf transistor list Manufacture & Suppliers

Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz

Product Overview The BFR340F is a low noise, silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering l...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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SiGe C Technology RF Bipolar Transistor Infineon BFP640ESDH6327 for Industrial Wireless Applications

Product Overview The BFP640ESD is a robust silicon NPN RF bipolar transistor from Infineon's sixth generation transistor family, utilizing SiGe:C technology. It offers high RF gain, low noise figure, and excell...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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SiGe C Technology Infineon BFP 650F H6327 NPN RF Bipolar Transistor for Oscillator and RF Applications

Product Overview The BFP650F is a low-profile NPN RF bipolar transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 G...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

Site Member

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RF Power Transistors MRF571 - Motorola, Inc - NPN Silicon High-Frequency Transistors

Quick Detail: MRF571 - Motorola, Inc - NPN Silicon High-Frequency Transistors Description: Designed for low noise, wide dynamic range front��end amplifiers and low��noise VCO��s. Available in a surface��mountable p...

Mega Source Elec.Limited
China

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TO18 Small Signal Transistor Central 2N2368 PBFREE Suitable for RF IF Oscillation and Amplification Needs

...Signal Transistors - TO-18 Case Central Semiconductor offers a range of small signal transistors in the TO-18 case, designed for various applications including RF/IF oscillation, amplification, switching, an...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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RF Power Transistors MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS

Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand��held radio. The MHW903, MHW953 and MHW954...

Mega Source Elec.Limited
China

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PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors

PTFA18100 is a RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 �� 1880 MHz . Part NO: PTFA18100 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Ele...

Mega Source Elec.Limited
China

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MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

Quick Detail: MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high...

Mega Source Elec.Limited
China

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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Quick Detail: MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ...

Mega Source Elec.Limited
China

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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Quick Detail: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz Applications: · Low Noise - 2.5 dB @ 500 ......

Mega Source Elec.Limited
China

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RF Power Transistors EMM5077VU SUMITOMO SMD New and Original in stock

RF Power Transistors EMM5077VU SUMITOMO SMD New and Original in stock Part No EMM5077VU Manufacturer SUMITOMO Package SMD Description New and Original Shipping: 1, We can ......

Mega Source Elec.Limited
China

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High gain and low noise Infineon BFP840FESDH6327XTSA1 transistor designed for 5 GHz band industrial

...BFP840FESD is a discrete RF heterojunction bipolar transistor (HBT) with integrated ESD protection, specifically designed for 5 GHz band applications. It offers a unique combination of high RF performance an...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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MRF151G RF N Channel Transistor Broadband Replacement For BLF278

MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MRF151G RF N Channel Transistor Broadband Replacement For BLF278

MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 MHz, 50 V 2, Output ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF

BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band Feature 1, ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101

...RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the ga...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

Site Member

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High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure

Product Overview The BFR182 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 1 mA to 20 mA, offering a transition freq...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device

Product Overview The BFP183W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents from 2 mA to 30 mA, offering a transition frequency (fT) ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Rf Transistor List

Total 7131 products for rf transistor list Manufacture & Suppliers

Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz

SiGe C Technology RF Bipolar Transistor Infineon BFP640ESDH6327 for Industrial Wireless Applications

SiGe C Technology Infineon BFP 650F H6327 NPN RF Bipolar Transistor for Oscillator and RF Applications

RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

RF Power Transistors MRF571 - Motorola, Inc - NPN Silicon High-Frequency Transistors

TO18 Small Signal Transistor Central 2N2368 PBFREE Suitable for RF IF Oscillation and Amplification Needs

RF Power Transistors MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS

PTFA18100 RF Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz MOTOROLA RF Power Transistors

MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

RF Power Transistors EMM5077VU SUMITOMO SMD New and Original in stock

High gain and low noise Infineon BFP840FESDH6327XTSA1 transistor designed for 5 GHz band industrial

MRF151G RF N Channel Transistor Broadband Replacement For BLF278

MRF151G RF N Channel Transistor Broadband Replacement For BLF278

High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF

Enhancement Type Mosfet N Channel Transistor 45W 12.5V RA45H4045MR-101

High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure

High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device