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Infineon RF Transistors - 7th & 8th Generation Infineon's 7th and 8th generation RF transistors are discrete Heterojunction Bipolar Transistors (HBT) designed for complementary wireless solutions, offering robu...
... RF Transistors Infineon's RF transistors offer robust, flexible, and reliable solutions for complementary wireless applications. Designed for increasing data traffic and connectivity demands in mobile syste...
JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transis...
ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Ca...
... The BFP760 is a low-noise silicon germanium bipolar RF transistor designed for high-frequency applications. It offers excellent performance characteristics suitable for various RF and protection device appl...
VOS617A-4T Optoisolator Transistor Output 3750Vrms 1 Channel 4-SSOP Manufacturer: Vishay Product Category: Transistor Output Optocouplers RoHS: Details Mounting Style: SMD/SMT Package / Case: SSOP-4 Number of C...
... Silicon RF Transistor designed for broadband amplifiers up to 1 GHz and for mixers and oscillators in sub-GHz applications. It offers excellent performance with a low noise figure and high intercept point, ...
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate volta...
...-automotive applications including WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE, and ISM bands. The transistor comes in an easy-to-use standard package with visible leads and is Pb-free (RoHS ...
...noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable as a power amplifier for DECT and ...
... silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers. It is suitable for antenna and telecommunications systems operating up to 1.5 GHz with collector currents ranging f...
... silicon bipolar RF transistor designed for microwave low-noise amplifiers operating at low currents. It is suitable for DC power supply voltages between 3.3V and 5V and can be used in oscillator circuits up...
Product Overview The BFS17S is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It is suitable for collector currents ranging from 1 mA to 20 mA. This Pb-free (RoHS compliant) ......
Product Overview The BFR380F is a high-linearity, low-noise silicon bipolar RF transistor designed for driver amplifier applications. It offers an output compression point of 19.5 dBm at 1.8 GHz and a low noise...
Product Overview The BFP410 is a low-noise silicon bipolar RF transistor designed for high-frequency applications. It is suitable for handheld devices, high-frequency oscillators such as DROs for LNBs, and ISM ...
Product Overview The BFP405 is a low-noise silicon bipolar RF transistor designed for low current applications and oscillators up to 12 GHz. It offers a minimum noise figure (NFmin) of 1.25 dB at 1.8 GHz and an...
Product Overview The BFR183 is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates at collector currents ranging from 2 mA to 30 mA, offering a transition frequenc...
Product Overview The BFR193L3 is an NPN Bipolar RF Transistor designed for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a ......
Product Overview The BFR93AW is a low-noise silicon bipolar RF transistor designed for low distortion amplifiers and oscillators operating up to 2 GHz. It is suitable for collector currents ranging from 5 mA to...
Product Overview The BFR93A is a low-noise silicon bipolar RF transistor designed for low-noise, high gain broadband amplifiers. It is suitable for collector currents ranging from 2 mA to 30 mA and is Pb-......