| Sign In | Join Free | My burrillandco.com |
|
Product Overview The BFR92P is a low-noise silicon bipolar RF transistor designed for broadband amplifiers up to 2 GHz and fast non-saturated switches. It operates with collector currents ranging from 0.5 mA to...
Product Overview The BFP181 is a low-noise silicon bipolar RF transistor designed for low-noise, high-gain broadband amplifiers. It operates at collector currents from 0.5 mA to 12 mA and features a transition ...
Product Overview The BFS17W is a NPN Silicon RF Transistor designed for broadband amplifiers up to 1 GHz. It operates at collector currents ranging from 1 mA to 20 mA and comes in a Pb-free (RoHS ......
Product Overview The BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It offers a transition frequency (fT) of 8 GHz and a minim...
Product Overview The BFP193 is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It offers excellent performance with a transition frequency (fT) of 8...
Product Overview The BFP193W is a low-noise silicon bipolar RF transistor designed for high-gain and linear broadband amplifiers up to 2 GHz. It features a transition frequency (fT) of 8 GHz and a minimum noise...
Product Overview The BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a mi...
Product Overview The BFR182W is a low-noise silicon bipolar RF transistor designed for high-gain broadband amplifiers. It operates effectively at collector currents ranging from 1 mA to 20 mA, offering a transi...
Product Overview The BFP540FESD is a low-noise silicon bipolar RF transistor designed for ESD-protected high-gain low-noise amplifiers. It offers excellent ESD performance with a typical value of 1000 V (......
Product Overview The BFP196 is a low-noise silicon bipolar RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It is also suitable ...
... NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high RF performance and robustness, with a maximum RF input power of 21 dBm and 2 kV ESD...
Product Overview The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) featuring integrated ESD protection. It offers a unique combination of high-end RF performance and robustness, includi...
... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequen...
... Overview The BFP620 is a surface mount, high linearity silicon NPN RF bipolar transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity ...
Product Overview The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT) designed for high-frequency applications. It offers a high transition frequency (fT = 45 GHz) enabling low noise ......
Product Overview The BFP405F is a low-profile, wideband silicon NPN RF bipolar transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characte...
Product Overview The BFR380F is a high-frequency, low-noise, broadband RF silicon bipolar transistor designed for optimal performance in the 30-40mA collector current and 3-5V voltage range. It is suitable for ...
BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier at 1.8 GHz • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for ......
Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed...