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... Attribute Value Manufacturer: Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 2.6 A Vds - Drain-Source Breakdown Voltage: - 500 mV, ......
... Trans MOSFET N-CH 30V 17A/32A 8-Pin PQFN EP T/R Bom Service One- Stop Electronic Components BOM List Kitting Service IC Diode Transistor Capacitor Resistor Inductors Connectors Matching 1....
...Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFE...
D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current...
...Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRF...
Quick Detail: MHW5182 - Motorola, Inc - 450 MHz CATV Amplifier Description: . . . designed specifically for 450 MHz CATV applications. Features ionim -planted arsenic emitter transistors with 7.0 GHz fT and an...
2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB ......
SSM6N48FU,RF(D Specifications Part Status Obsolete FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25C 100mA (Ta) Rds O...
... is a silicon-based microwave bipolar transistor primarily used in high-frequency electronic amplifier circuits. It offers a low noise figure and a high cutoff frequency, making it suitable for demanding RF ...
... Overview The TOSHIBA 2SC2714 is a silicon NPN epitaxial planar type transistor utilizing the PCT process. It is designed for high-frequency amplifier applications, including FM, RF, MIX, and IF amplificatio...
Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Curr...
Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Curr...
... per MIL-STD-202, Method 208 Weight: 0.08 ounces, 2.24 grams STOCK LIST TLC2272AIDR 7332 TI 15+ SOP-8 TLC2272CDR 13316 TI 15+ SOP-8 TLC2272CP 19536 TI 14+ SOP-8 ......
... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr...
... options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into an...
MW4IC2230MBR1 is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW4IC2230MBR1 Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD ...
MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog an...
MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and d...
BLF188XR RF Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 24.4dB 1400W SOT539A Features eXtremely rugged high-power delivery up to 1400 W Excellent stability under severe mismatch conditions Compact and ea...
MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog an...