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Total 15237 products for sdram cycle time Manufacture & Suppliers

M15T4G16256A–DEBG2G Memory IC Chip 933MHz DDR3 SDRAM Memory Chip BGA-96

..., package is BGA-96. DDR3(L) SDRAM uses a double data rate architecture to achieve high-speed operation. The double datarate architecture is an 8n-prefetch architecture with an interface designed to transfer...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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DDR4 4Gb SDRAM Chip 32Mx4 FBGA-96 1.2V 8K Refresh IMD256M16R4ABD8LY

...SDRAM Memory Chip Refresh IMD256M16R4ABD8LY DDR4 SDRAM IMD256M16R4ABD8LY – 32 Meg x 16 x 8 Banks Features VDD = VDDQ = 1.2V ±60mV VPP = 2.5V, –125mV/+250mV On-die, internal, adjustable VREFDQ generation 1.2V...

Shenzhen Filetti Technology Co., LTD
China

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K4B4G1646E-BYMA Samsung DDR SDRAM Package FBGA-96 ROHS

... or Symbol ManufacturerSamsung TechnologyDDR3L Capacity4Gb Organization256Mx16 Bus-Widthx16 PackageBGA Pin/Ball Count96 Voltage1.35/1.5V Min. Cycle Time1.072ns Max. Clock-Speed933 MHz Max. Data-Rate1866 MT/s...

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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Integrated Circuit Chip MT40A1G16TB-062E IT:F SDRAM DDR4 Memory IC 96FBGA 16Gbit Memory Chip

...SDRAM DDR4 Memory IC 96FBGA 16Gbit Memory Chip Product Description Of MT40A1G16TB-062E IT:F MT40A1G16TB-062E IT:F The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-pref...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MT40A2G8SA-062E IT:F SDRAM DDR4 Memory IC 78FBGA IC Chip

...DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. Specification Of MT40A2G...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

..., fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of opera...

Mega Source Elec.Limited
China

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Flash Memory IC Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

..., fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of opera...

Mega Source Elec.Limited
China

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K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

..., fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of ope...

Mega Source Elec.Limited
China

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AT91 ARM Thumb-based Microcontrollers ARM-based Embedded MPU DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR AT91SAM9G45

...SDRAM/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static Memories, CompactFlash, SLC NAND Flash with ECC – One 64-KByte internal SRAM, single-cycle access at system speed or pro...

Anterwell Technology Ltd.
Guangdong,China

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Leisure 12v 120Ah Lithium Iron Phosphate Deep Cycle Battery

... long guarantee time. 2. More rechargeable time, longer life time, economic and environmental protection. 3. Light weight and portable. 4. LIFEPO4 material more safe. 5. Inbuit BMS multiple security protecti...

Shenzhen Bely Energy Technology Co., Ltd.
Guangdong,China

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MT41K512M16HA-125 IT:A Memory IC Chip SDRAM DDR3 8Gbit 1600Hz FBGA96

... Size: 8 Gbit Access Time: 13.5 ns Supply Voltage - Max: 1.283 V Supply Voltage - Min: 1.45 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 95 C Description DDR3L SDRAM (1.35V) is a ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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Single Supply SDRAM 54TSOP IC Memory Chip IS42S16400J-7TL 64MBIT 143MHZ

...SDRAM 64MBIT 143MHZ 54TSOP Memory IC FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MT48LC32M8A2 Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM

...-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/...

Anterwell Technology Ltd.
Guangdong,China

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MT46V8M16 Original Integrated Circuit Integrated Circuit Chip DOUBLE DATA RATE DDR SDRAM

...SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has ...

Anterwell Technology Ltd.
Guangdong,China

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MT46V16M16TG-75C DOUBLE DATA RATE DDR SDRAM linear integrated circuits

...-synchronous data capture (x16 has two - one per byte) • Internal, pipelined doule-data-rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered ...

Anterwell Technology Ltd.
Guangdong,China

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K4S641632H - UC75 Integrated Circuit Chip 64Mb H die Synchronous SDRAM IC

...64Mb H die Synchronous SDRAM IC 4M x 4Bit x 4 / 2M x 8Bit x 4 / 1M x 16Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks oper...

Anterwell Technology Ltd.
Guangdong,China

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K4H561638H-UCB3 Electronic IC Chips 256Mb H-die DDR SDRAM Specification

...SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) Key Features • VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333 • VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400 • Double-data-rate archite...

Anterwell Technology Ltd.
Guangdong,China

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MT48LC32M8A2FB-75:D TR Programmable IC Chips Synchronous DRAM 256Mb x4 x8 x16 SDRAM

...-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for hiding row access/...

ChongMing Group (HK) Int'l Co., Ltd
China

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MT46V8M16TG-6T IT:D TR Original Integrated Circuit Integrated Circuit Chip DOUBLE DATA RATE DDR SDRAM

...SDRAM FEATURES • 167 MHz Clock, 333 Mb/s/p data rate • VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has ...

ChongMing Group (HK) Int'l Co., Ltd
China

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Sdram Cycle Time

Total 15237 products for sdram cycle time Manufacture & Suppliers