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Total 15855 products for sdram cycle time Manufacture & Suppliers

W971GG6NB-25 8M 8BANKS 16BIT 1G Bits DDR2 SDRAM Two Data Transfers Per Clock Cycle

...clock cycle. Product Overview The W971GG6NB is a high-speed DDR2 SDRAM designed for various applications. This -25 grade part is compliant with DDR2-800 (5-5-5) or DDR2-800 (6-6-6) specifications and operate...

Shenzhen Filetti Technology Co., LTD
China

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MT40A512M16LY-075:E 8Gb: X4 X8 X16 Parallel Interface DDR4 SDRAM

...SDRAM High-performance 8Gb DDR4 SDRAM with X4, X8, and X16 parallel interfaces, designed for demanding industrial and computing applications. Product Features Operating voltage: VDD = VDDQ = 1.2V ±60mV VPP =...

Shenzhen Filetti Technology Co., LTD
China

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Flash Memory IC Chip MT47H16M16BG-3 IT:B TR - Micron Technology - DDR2 SDRAM

...SDRAM Description: The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed...

Mega Source Elec.Limited
China

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Flash Memory IC Chip MT47H128M16RT-25 EC - Micron Technology - DDR2 SDRAM

...SDRAM Description: The DDR2 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4n-prefetch architecture, with an interface designed...

Mega Source Elec.Limited
China

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M15T4G16256A–DEBG2G Memory IC Chip 933MHz DDR3 SDRAM Memory Chip BGA-96

..., package is BGA-96. DDR3(L) SDRAM uses a double data rate architecture to achieve high-speed operation. The double datarate architecture is an 8n-prefetch architecture with an interface designed to transfer...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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NT5CB128M16JR-FL High-Speed Automotive DDR3 SDRAM Memory IC Chip 2Gb BGA96 Package

... internally configured as an eight-bank DRAM. The DDR3 SDRAM uses an 8n prefetch architecture to achieve high speed operation. The 8n prefetch architecture is combined with an interface designed to transfer ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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DDR4 4Gb SDRAM Chip 32Mx4 FBGA-96 1.2V 8K Refresh IMD256M16R4ABD8LY

...SDRAM Memory Chip Refresh IMD256M16R4ABD8LY DDR4 SDRAM IMD256M16R4ABD8LY – 32 Meg x 16 x 8 Banks Features VDD = VDDQ = 1.2V ±60mV VPP = 2.5V, –125mV/+250mV On-die, internal, adjustable VREFDQ generation 1.2V...

Shenzhen Filetti Technology Co., LTD
China

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W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

...SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory Product Overview W9425G6KH-5 4M 4 Banks 16-Bit DDR SDRAM is a CMOS Double Data Rate Synchronous Dynamic Random Access Memory designed for ...

Shenzhen Filetti Technology Co., LTD
China

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K4B4G1646E-BYMA Samsung DDR SDRAM Package FBGA-96 ROHS

... or Symbol ManufacturerSamsung TechnologyDDR3L Capacity4Gb Organization256Mx16 Bus-Widthx16 PackageBGA Pin/Ball Count96 Voltage1.35/1.5V Min. Cycle Time1.072ns Max. Clock-Speed933 MHz Max. Data-Rate1866 MT/s...

ShenZhen QingFengYuan Technology Co.,Ltd.
China

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Integrated Circuit Chip MT40A1G16TB-062E IT:F SDRAM DDR4 Memory IC 96FBGA 16Gbit Memory Chip

...SDRAM DDR4 Memory IC 96FBGA 16Gbit Memory Chip Product Description Of MT40A1G16TB-062E IT:F MT40A1G16TB-062E IT:F The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-pref...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MT40A2G8SA-062E IT:F SDRAM DDR4 Memory IC 78FBGA IC Chip

...DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. Specification Of MT40A2G...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

..., fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of opera...

Mega Source Elec.Limited
China

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Flash Memory IC Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

..., fabricated with SAMSUNG high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of opera...

Mega Source Elec.Limited
China

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K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

..., fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of ope...

Mega Source Elec.Limited
China

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MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

...h an operating voltage range of 1.283V to 1.45V. Product Overview The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. This product meets all functional and timing specificati...

Shenzhen Filetti Technology Co., LTD
China

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AT91 ARM Thumb-based Microcontrollers ARM-based Embedded MPU DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR AT91SAM9G45

...SDRAM/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static Memories, CompactFlash, SLC NAND Flash with ECC – One 64-KByte internal SRAM, single-cycle access at system speed or pro...

Anterwell Technology Ltd.
Guangdong,China

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Leisure 12v 120Ah Lithium Iron Phosphate Deep Cycle Battery

... long guarantee time. 2. More rechargeable time, longer life time, economic and environmental protection. 3. Light weight and portable. 4. LIFEPO4 material more safe. 5. Inbuit BMS multiple security protecti...

Shenzhen Bely Energy Technology Co., Ltd.
Guangdong,China

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MT41K512M16HA-125 IT:A Memory IC Chip SDRAM DDR3 8Gbit 1600Hz FBGA96

... Size: 8 Gbit Access Time: 13.5 ns Supply Voltage - Max: 1.283 V Supply Voltage - Min: 1.45 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 95 C Description DDR3L SDRAM (1.35V) is a ...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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MT41K128M16JT-125 IT:K 2Gbit DDR3L SDRAM Memory IC Chip with 800MHz Clock Frequency in FBGA-96 Package

...SDRAM Memory Chip FBGA96 Product Description Of MT41K128M16JT-125 IT:K MT41K128M16JT-125 IT:K is a 2Gbit capacity DDR3L Synchronous Dynamic Random‑Access Memory (SDRAM) in an FBGA-96 package. Specification O...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Sdram Cycle Time

Total 15855 products for sdram cycle time Manufacture & Suppliers

W971GG6NB-25 8M 8BANKS 16BIT 1G Bits DDR2 SDRAM Two Data Transfers Per Clock Cycle

MT40A512M16LY-075:E 8Gb: X4 X8 X16 Parallel Interface DDR4 SDRAM

Flash Memory IC Chip MT47H16M16BG-3 IT:B TR - Micron Technology - DDR2 SDRAM

Flash Memory IC Chip MT47H128M16RT-25 EC - Micron Technology - DDR2 SDRAM

M15T4G16256A–DEBG2G Memory IC Chip 933MHz DDR3 SDRAM Memory Chip BGA-96

NT5CB128M16JR-FL High-Speed Automotive DDR3 SDRAM Memory IC Chip 2Gb BGA96 Package

DDR4 4Gb SDRAM Chip 32Mx4 FBGA-96 1.2V 8K Refresh IMD256M16R4ABD8LY

W9425G6KH-5 4 M 4 BANKS 16 BITS DDR SDRAM CMOS Double Data Rate Synchronous Dynamic Random Access Memory

K4B4G1646E-BYMA Samsung DDR SDRAM Package FBGA-96 ROHS

Integrated Circuit Chip MT40A1G16TB-062E IT:F SDRAM DDR4 Memory IC 96FBGA 16Gbit Memory Chip

Integrated Circuit Chip MT40A2G8SA-062E IT:F SDRAM DDR4 Memory IC 78FBGA IC Chip

Integrated Circuit Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

Flash Memory IC Chip K4M513233C-DN75 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

K4M561633G-BN75 - Samsung semiconductor - 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

MT41K128M16JT-125:k 2Gb: x4 x8 x16 DDR3L SDRAM 800MHz 1.283V~1.45V

AT91 ARM Thumb-based Microcontrollers ARM-based Embedded MPU DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR AT91SAM9G45

Leisure 12v 120Ah Lithium Iron Phosphate Deep Cycle Battery

MT41K512M16HA-125 IT:A Memory IC Chip SDRAM DDR3 8Gbit 1600Hz FBGA96

MT41K128M16JT-125 IT:K 2Gbit DDR3L SDRAM Memory IC Chip with 800MHz Clock Frequency in FBGA-96 Package