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Total 3057 products for semiconductor silicon wafer Manufacture & Suppliers

Quartz Boats Fused Silica Boat SiO₂≥99.99% Surface Roughness Ra≤0.1μm Wafer Carrier

... (SiO₂) through high-temperature melting processes. Renowned for their exceptional thermal resistance, chemical stability, and optical transparency, they serve as irreplaceable components in semiconductor fa...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Si3N4 Silicon Nitride Ceramic Substrate Plate Wafer Board Wear Resistant High Temperature

Features Silicon nitride wafer/plate is a gray ceramics,it has excellent resistance to thermal shock resistance,and it has a property that is a comparatively hard to get wettability with molten metal. By utiliz...

Wuxi Special Ceramic Electrical Co.,Ltd
Jiangsu,China

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Customized GaN-On-GaN SiC Silicon Sapphire Substrate Epitaxial Wafer 4inch Dia 100mm

B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical GaN, there are no mismatched sub...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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ANSI DIN BS JIS Standard Silicone seated Wafer style Butterfly Valve for hot air

... gate valves/dismantling joint in various materials to match different international standards. Silicone seated butterfly valves Details show Other hot selling products: We focus on every process for every v...

Veyron Valve (Tianjin) Co.,Ltd
Tianjin,China

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4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates

...Wafers 4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC on Insulator Substrates SICOI (Silicon Carbide on Insulator) wafers represent an advanced composite substrate technology fabricated through either Smart...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade

...wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Precision Advanced Technical Ceramics , High Temperature Abrasive Resistance Semiconductor Ceramic Arm with Slot

...Semiconductor Ceramic Arm with Slot Semiconductor Ceramic Arm Product Description Ceramic End - Effectors, Endeffector, Endeffectors, Wafer Carrier, Wafer Chuck, Wafer Pick - Up Tools, Wafer Tools: NetMotion...

Dongguan Ming Rui Ceramic Technology Co.,ltd
Guangdong,China

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Precision Advanced Technical Ceramics , High Temperature Abrasive Resistance Semiconductor Ceramic Arm with Slot

...Semiconductor Ceramic Arm with Slot Semiconductor Ceramic Arm Product Description Ceramic End - Effectors, Endeffector, Endeffectors, Wafer Carrier, Wafer Chuck, Wafer Pick - Up Tools, Wafer Tools: NetMotion...

Dongguan Ming Rui Ceramic Technology Co.,ltd
Guangdong,China

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4H-N 5x5mm Sic Wafers DSP Ceramic Catalyst Substrate

... cm^2/Vs 1400 950 1500 Drift speed 10^7 cm/s 1 2.7 2.5 Thermal conductivity W/cmK 1.5 3.8 1.3 4H-N 5x5mm SiC (Silicon Carbide) wafers with double-side polished (DSP) surfaces are...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers

...Silicon Carbide Wafers 6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm 4H Semi SiC Substrate Research Grade Single Crystal 2inch dia50mm 330μm thickness 4H N-...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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4H-N Silicon Carbide SiC Substrate 8 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

...wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type Character of 4H-N SiC - use SI...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

...circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer i...

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Henan,China

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2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

...circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer i...

HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
Henan,China

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12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication

... innovation in the semiconductor industry, with dimensions up to 300 mm, much larger than traditional 6 or 8inch substrates. This increase in size means that more chips can be made on a single wafer, signifi...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade

... Silicon Carbide (SiC) Substrate – Prime/Dummy/Research Grade This product series provides high-purity Silicon Carbide (SiC) substrates in multiple diameters (2", 3", 4", 6", 8", and...

SHANGHAI FAMOUS TRADE CO.,LTD
Shanghai,China

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N Type , Indium Phosphide Wafer , 6”, Test Grade -Powerway Wafer

...Wafer , 6”, Test Grade -Powerway Wafer PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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Germanium Substrate For Solar Cell -Powerway Wafer

...Wafer PAM-XIAMEN is a worldwide manufacturer of single crystal Germanium wafer ( Ge wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer for micro-electronics and opto-elect...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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P Type , Ga-Doped Single Crystal Germanium(Ge) Wafer , 3”

...Wafer , 3” PAM-XIAMEN is a worldwide manufacturer of single crystal Germanium wafer ( Ge wafer ) and single crystal Ge ingot , we have a strong advantage in providing Ge wafer for micro-electronics and opto-...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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Undoped Germanium Wafer With Low Etch Pit Density, Epi-Ready , 6”

... a strong advantage in providing Ge wafer for micro-electronics and opto-electronics industry in diameter range from 2 inch to 6 inch . Germanium wafer is an elemental and popular semiconductor material, due...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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Intrinsic Germanium Wafer With (111),(100) Or (110) Orientation , 4”

...Wafer With (111),(100) Or (110) Orientation , 4” PAM-XIAMEN offers Germanium wafer Single Crystals and Wafers grown by VGF / LEC, we have a strong advantage in providing Ge wafer for micro-electronics and op...

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Fujian,China

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Semiconductor Silicon Wafer

Total 3057 products for semiconductor silicon wafer Manufacture & Suppliers

Quartz Boats Fused Silica Boat SiO₂≥99.99% Surface Roughness Ra≤0.1μm Wafer Carrier

Si3N4 Silicon Nitride Ceramic Substrate Plate Wafer Board Wear Resistant High Temperature

Customized GaN-On-GaN SiC Silicon Sapphire Substrate Epitaxial Wafer 4inch Dia 100mm

ANSI DIN BS JIS Standard Silicone seated Wafer style Butterfly Valve for hot air

4inch 6inch 8inch 4H-SiCOI Wafers Composite SiC On Insulator Substrates

4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade

Precision Advanced Technical Ceramics , High Temperature Abrasive Resistance Semiconductor Ceramic Arm with Slot

Precision Advanced Technical Ceramics , High Temperature Abrasive Resistance Semiconductor Ceramic Arm with Slot

4H-N 5x5mm Sic Wafers DSP Ceramic Catalyst Substrate

4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers

4H-N Silicon Carbide SiC Substrate 8 Inch Thickness 350um 500um Prime Grade Dummy Grade SiC Wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

2um - 300um Technical Ceramic Parts Silicon On Insulator SOI Wafer

12Inch Sic Single Crystal Silicon Carbide Substrate Large Size High Purity Diameter 300mm Product Grade For 5G communication

Silicon Carbide SiC Wafer 4H-N 2"3"4"6"8"12" N Type Prime / Dummy / Research Grade

N Type , Indium Phosphide Wafer , 6”, Test Grade -Powerway Wafer

Germanium Substrate For Solar Cell -Powerway Wafer

P Type , Ga-Doped Single Crystal Germanium(Ge) Wafer , 3”

Undoped Germanium Wafer With Low Etch Pit Density, Epi-Ready , 6”

Intrinsic Germanium Wafer With (111),(100) Or (110) Orientation , 4”