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Storm Drain Channel

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Total 6145 products for storm drain channel Manufacture & Suppliers

NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor

...Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® NDS355AN MOSFET Power Electronics N-Channel Logic Level Enhancement Mode Field Effect Transistor P-Channel 1.8V ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FDC638P MOSFET Power Electronics P-Channel 2.5V Trench load switching

... MOSFET–20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Cont...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FDY102PZ MOSFET Electronics Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V –0.83 A 0.5 Ω

...Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFETFDY102PZ MOSFET Electronics Single P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V –0.83 A 0.5 Ω –2...

Shenzhen Sai Collie Technology Co., Ltd.
China

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NTR4503NT1G MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A

...Channel (–1.5 V) Specified PowerTrench® MOSFETSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFETNTR4503NT1G MOSFET Power Electronics Single N-Channel Low Gate Charge SOT-23 30 V 2.5 A –20 V, –0.83 A, 0....

Shenzhen Sai Collie Technology Co., Ltd.
China

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FDC610PZ MOSFET Power Electronics P-Channel PowerTrench –30V –4.9A 42mΩ

... MOSFET–20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET–20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Cont...

Shenzhen Sai Collie Technology Co., Ltd.
China

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NTS4409NT1G MOSFET Power Electronics Single N-Channel Small ESD Protection SC-70 SOT-323 25 V 0.75 A

...��20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Integrated Circuit Chip IMW120R014M1H N-Channel Silicon Carbide Transistors TO-247-3

.... Specification Of IMW120R014M1H Part Number: IMW120R014M1H Technology: SiC Mounting Style: Through Hole Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.2...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N-Channel IMBG65R260M1H Silicon Carbide Single FETs MOSFETs Transistors TO-263-8

...Channel IMBG65R260M1H Silicon Carbide Single FETs MOSFETs Transistors TO-263-8 Product Description Of IMBG65R260M1H IMBG65R260M1H is 650V N-Channel MOSFETs Transistors, enables the simplified and cost effec...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip IPB180P04P403ATMA2 P-Channel 40V 180A Transistors

...Channel 40V 180A Transistors Product Description Of IPB180P04P403ATMA2 IPB180P04P403ATMA2 is a P-Channel 40 V 180A (Tc) 150W (Tc) Transistors Surface Mount PG-TO263-7-3. Specification Of IPB180P04P403ATMA2 P...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

...Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impedance Zth JA = ƒ(tp) param...

Anterwell Technology Ltd.
Guangdong,China

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BUK7Y3R5-40HX , NXP , 40 V , 120A , Rds On - Drain-Source Resistance , 934660066115

... Voltage: 40 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 3.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.4 V ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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BUK7Y3R5-40HX , , 40 V , 120A , Rds On - Drain-Source Resistance , 934660066115

... Voltage: 40 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 3.5 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.4 V ......

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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Food Grade 316 Stainless Steel Grating Channel Drain Wedge Wire

316 Food Grade Stainless Grate Channel Drain Wedge Wire Grating HEELGUARD technology drain grates are constructed with your safety in mind. We’ve created our stainless steel drains in a grid form with a non-sli...

Hebei Zhuote wire mesh products Co., LTD
China

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SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics

...Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(on) Product Technical Specifications: -Dr...

Shenzhen Sai Collie Technology Co., Ltd.
China

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Stainless Galvanized Steel Grating Channels With Siphon Floor Drain / Plate Cover

... they can all work certain scenarios, it is important to choose something that is strong, durable, and long-lasting. Stainless steel trench drain grates are an excellent option that will work for any facilit...

Hebei Qijie Wire Mesh MFG Co., Ltd
Hebei,China

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1.22m Width Metal Floor Drain Grates Steel Channel Drain Grates Rustproof

1.22m Width Metal Floor Drain Grates Steel Channel Drain Grates Rustproof�� As normal, hole of grip strut safety grating is regular, hole length 47mm applies to thickness of 1.5mm to 4.0mm. It provides one of th...

Hebei Qijie Wire Mesh MFG Co., Ltd
Hebei,China

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FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V

... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V...

Walton Electronics Co., Ltd.
China

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FDMA3023PZ MOSFET Transistor IC Chip MicroFET-6 Package 2P Channel

...MicroFET-6 Transistor Polarity: P-Channel Number of Channels: 2 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 2.9 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-S...

Walton Electronics Co., Ltd.
China

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1 Channel Diode MOSFET Chips IRLML6244TRPBF Transistor 1.3W

...: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 6.3 A Rds On - Dra...

Hong Kong Jia Li Xin Technology Limited
China

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Single Configuration N Channel MOSFET 60V 11A 37A

...-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 37 A Rds On - Drain-Source Resistance: 11.5 mOhms Vgs - Gate-Source V...

QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
China

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