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... (D3PAK) package. Specification Of MSC360SMA120S Part Number: MSC360SMA120S Technology: SiC Package / Case: TO-268 Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Rds On - Drain-S...
...Channel Transistors TO-247-4 Silicon Carbide Product Description Of MSC750SMA170B4 MSC750SMA170B4 is N-Channel Single FETs MOSFETs Transistors, package is TO-247-4, Through Hole. Specification Of MSC750SMA1...
... enabling increased power density and minimized conduction losses. Specification Of IPL60R225CFD7AUMA1 Part Number IPL60R225CFD7AUMA1 Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V...
...Channel NTMFD5C470NLT1G Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specifi...
...Channel Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel Transistors. Specificatio...
...channel SiC power MOSFET TO-263-8 Integrated Circuit Chip Product Description Of SCT4045DW7HRTL SCT4045DW7HRTL is 750V 31A(Tc) 93W Automotive Grade N-channel SiC power MOSFET Transistors, package is TO-263-...
...Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW060N120C,S1F TW060N120C,S1F is Silicon Carbide N-Channel MOS Transistors, package is TO-247-3. Specification Of TW060N120C,S1F Part Numbe...
...Channel 153W Transistors Through Hole Product Description Of SCT20N120AG SCT20N120AG is N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. ...
... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs ......
...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON),...
...Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power Transistor. Specification Of IGLR60R190D1XUMA1 Product Statu...
...Channel CoolGaN Power Transistor 8-LDFN Surface Mount Product Description Of IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 is N-Channel CoolGaN power transistor,the package is 8-LDFN surface mount. Specification Of IG...
...Channels PVC Drainer Floor Mat for Wet Areas Non Slip S Grip PVC Channels Mat is designed to function as a drainer mat.It can drain through large amounts of excess liquids away from standing surfaces, provid...
...-Accuracy Voltage Detectors are two-channel voltage detectors with low-power and small solution size. The SENSE1 and SENSE2 inputs include hysteresis to reject brief glitches, ......
...channel Enhancement Mode Features: Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted) Paramet...
... trench cover with angle bar on the two side of the grating. It is fit for the concrete trench, which is molded a channel to place the grates. The sided angle bars can bear the load capacity of the grating a...
...Channel Mosfet Array Product Description Of MSCSM170HM087CAG MSCSM170HM087CAG is Mosfet Array 1700V (1.7kV) 238A (Tc) 1.114kW (Tc) Chassis Mount, Dual common source silicon carbide (SiC) MOSFET power module...
Product Listing: IRF6218STRLPBF MOSFET Parameters: Drain-Source Voltage (Vdss): 200V Drain Current (Id): 20A Gate-Source Voltage (Vgs): 10V P-Channel Drain-Source On-Resistance (Rds): 0.027 Maximum Power Dissi...
...Channel MOSFET for Power Electronics Applications Product Description: MOSFET IPB108N15N3G is a high-performance, advanced technology power MOSFET designed for use in switching applications. It features low ...
...Channel Drain-Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 0.055 Ohm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250uA Gate Charge (Qg) @ Vgs: 14nC @ 10V Power - Max...