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...Mosfet Irfz44ns HLP Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of moder...
Mosfet Irfz44ns Through-Hole Version For Kretek MK8 Cigarette Machine Parts A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the b...
...MOSFET Power Electronics High Performance and Reliability Description: IRFB3006PBF MOSFET is a N-Channel MOSFET with a maximum drain source voltage of 100V and a continuous drain current of 30A. It has a max...
... N-Channel MOSFET designed for use in high power switching applications. This device offers a 200V drain-source voltage rating and a maximum drain current of 69A. It also provides a low on-resistance of 55mO...
SI7804DN-T1-E3DKR-ND MOSFET RECOMMENDED ALT Product Attribute Attribute Value Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-1212-8 T...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
2SB1316TL Power Transistor low power mosfet switching power mosfet] Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Comple...
...MOSFET General Description These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance ...
...MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (<1.1mm) • Available in Tape & Reel • Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching......
...MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugge...
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making i...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. ...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transi...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making i...
STP110N8F6 Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. ...
...MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugge...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...