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Switching Speed Of Transistor

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Total 15036 products for switching speed of transistor Manufacture & Suppliers

4nS Fast Switching Diode 1N4148WS For Consumer Electronic Applications

... in accordance with ISO9001 quality management system. All products have passed hazardous substance test,met standards of EU and USA Features 1. Fast Switching Speed Trr=4nS 2. Surface Mount Package Ideally ...

Wuxi Xuyang Electronics Co., Ltd.
Jiangsu,China

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SOD323 Surface Mount Fast Recovery Diodes For High Speed Switching BAS319 / BAS320 / BAS321

SOD323 Surface Mount Fast Switching Diode BAS319 / BAS320 / BAS321 Features * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * For General Purpose Switching Applications Max...

Wuxi Xuyang Electronics Co., Ltd.
Jiangsu,China

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BGA-29 Electronic Components Transistors SAK-TC397XX-256F300S BD

... to you, please let us know. we are pleased to quote you our best price . Thank you ! Transistors are electronic components that are commonly used in electronic circuits for amplification, switching, and oth...

DINGCEN INTERNATIONAL (HK) LIMITED
Guangdong,China

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NTF3055L108T1G Power Mosfet Transistor 3.0 A 60 V linear trench power mosfet

... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK...

Anterwell Technology Ltd.
Guangdong,China

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2n7002a-7 Programmable IC Chips N Channel Enhancement Mode Field Effect Transistor

2N7002A-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Pac...

Anterwell Technology Ltd.
Guangdong,China

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P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combine...

ChongMing Group (HK) Int'l Co., Ltd
China

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Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General

... techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides ...

ChongMing Group (HK) Int'l Co., Ltd
China

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Voltage 20V P Channel SMD Mosfet Transistor IRF7404TRPBF Current 7.7A SOP8 Package

... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extreme...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF3205PBF Mosfet Power Transistor 175°C Operating Temperature Ultra Low On - Resistance

... MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combi...

ChongMing Group (HK) Int'l Co., Ltd
China

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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors Features �� RDS(on) = 7.35m�� ( Typ.)@ VGS = 10V, ID = 96A �� Fast Switching Speed �� Low Gate Charge �� High Performance Trench Technology for E...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRFP9140N Transistor Components ,electronic devices and integrated circuits

...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ext...

ChongMing Group (HK) Int'l Co., Ltd
China

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Tlp627-4 Programmable Controllers Dc-Output Module Telecommunication Transistor Equivalent

... to a darliCM GROUPon connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP627-2 offers two isolated channels in ...

ChongMing Group (HK) Int'l Co., Ltd
China

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2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features �� Dual N-Channel MOSFET �� Low On-Resistance �� Low Gate Threshold Voltage �� Low Input Capacitance �� Fast Switching Speed �� Low Input/...

ChongMing Group (HK) Int'l Co., Ltd
China

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2N7002A-7 Programmable IC Chips N Channel Enhancement Mode Field Effect Transistor

2N7002A-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Small Surface Mount Pac...

ChongMing Group (HK) Int'l Co., Ltd
China

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RFP70N06 high power mosfet transistors Power Mosfet Transistor N-Channel Power MOSFETs

...approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, m...

Anterwell Technology Ltd.
Guangdong,China

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3DD13005 Npn Transistor Switch Emitter Base Voltage 9V High Efficiency

TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency

...Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch

AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses ...

Anterwell Technology Ltd.
Guangdong,China

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3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency

TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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