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... from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...
...Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fas...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate charge • Fast switching speed • High performance trench tec...
... Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN). FEATURE Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the PNP transistor 2N3906 is Reco...
...Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as ...
...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and ......
... Switching power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ......
... Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate...
...Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ma...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as ...
...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and ......
... Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate...