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SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Col...
SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
... Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead FreeandGreenDevicesAvailable (RoHSCompliant) Field ...
...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Fr...
...Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), ...
...Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power supplie...
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number...
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number...
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...
...Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS(on), ...
...Transistor Low ON Resistance AP15N10D Mosfet Power Transistor Applications Power MOSEFET technology is applicable to many types of circuit. Applications include: Linear power supplies Switching power supplie...
TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device code Solid dot=Green molding compound device, if none,the nor...
TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -B...
TO-220-3L Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR (NPN) FEATURE · power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta...
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERIN...
SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Col...
SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
... Transistor / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead FreeandGreenDevicesAvailable (RoHSCompliant) Field ...
...Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R DS(ON) = 25mΩ(typ.)@V GS = -4.5V 100% avalanche tested Reliable and Rugged Halogen Fr...