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...Power Ttransistors BD139 / BD140 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 80 ...
...power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 A Avalanc...
...power mosfet transistors FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. ABSOLUTE MAXIMUM RATING (Ta=25 ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Col...
...Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications • Low QG for Fast Response • High Repetitive Peak Current Capability for Reliable Operation • Short Fall & Rise Times for Fast S...
...Power Moudels Product details Mechnical specification Cell Type Poly crystalline 156*156 mm Number of cells 60(6*10) Dimensions 1640*990*40mm Weights 21kg Front Glass 3.2 mm tempered low iron alloy Frame Mat...
...Power Polycrystalline Solar Panels Feature: 1. The working principle of the system: solar panel receives the sunlight and convert to DC, junction box transport DC to the PV grid tie inverter and converted DC...
Single Pole UKK 400A Power Distribution Terminal Box UKK 400A NS 35 Din Rail Wiring Distribution Block Junction box The compact power distribution blocks with protection class IP20. These sub-distribution block...
...Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 ...
...power switching applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V...
...Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...Power Module MG200Q1US51 Transistor Module MG200Q1US51 Product Description Manufactured by: Toshiba America, Inc. Part number: MG200Q1US51 Part Category: Transistors Description: 300A, 1200V, N-CHANNEL IGBT ...
...achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. Notes: 1.Pulse width limite...
...Power 30Watt Multichip LED RGBW UV Products’ Features: High index of refraction, Good thermal stability Strong ability of Anti-interference Low voltage DC operation Multi-color, 4-IN-1, 5-in-1 Specifications...
...Power 30W 4IN1 RGB White LED Module Products’ Features: High index of refraction, Good thermal stability Strong ability of Anti-interference Low voltage DC operation Multi-color, 4-IN-1, 5-in-1 Specification...
FGH40N60SMDF 600V, 40A Field Stop IGBT Features Maximum Junction Temperature : TJ =175 Positive Temperaure Co-efficient for easy parallel operating High current capability Low saturation voltage: VCE(s...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...