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Total 8683 products for t junction power divider Manufacture & Suppliers

6MBP50RA060-01 IGBT Power Module IPM-N Screw Connection Metal Material

6MBP50RA060-01 IGBT Power Module IPM-N 600V 50A Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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SI2347DS-T1-GE3 N-Channel MOSFET Power Electronics Module for High Efficiency Applications

...: -VDSS: 30 V -RDS(ON): 2.1 mΩ (max) -Qg: 4.7 nC (max) -VGS: ±20 V -Input Capacitance (Ciss): 740 pF (typ) -Power Dissipation (PD): 1.1 W (max) -Operating Junction Temperature: 150°C...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRFD120PBF High-Performance N Channel MOSFET for Power Electronics Applications

... N Channel MOSFET for Power Electronics Applications Parameters: - Drain-Source Voltage (VDS): 100V - Drain Current (ID): 10A - RDS(on): 0.0055Ω - Gate-Source Voltage (VGS): ±20V - Power Dissipation (PD): 1W...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRF4104PBF MOSFET Power Electronics High-Performance Power Electronics for Enhanced Efficiency and Reliability

... Drain Current (Id): 19A • Pulsed Drain Current (Id): 73A • Drain-Source On-Resistance (Rds): 0.040ohm • Maximum Junction Temperature (Tj): 175°C • Operating Temperature Range: -55°C to +175°C •...

Shenzhen Sai Collie Technology Co., Ltd.
China

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BSP372NH6327 MOSFET Power Electronics High-Performance Power Electronics Solution

...): -63A - RDS(on): 0.0027Ω - Gate-Source Voltage (VGS): -20V - Drain-Source On-State Resistance (RDS(on)): 0.0027Ω - Maximum Junction Temperature (Tj): 175°C - Power...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRF740PBF Ultra-Low On-Resistance MOSFET Ideal for Power Electronics Applications

...Power Electronics Applications Features: • Low On-Resistance • Low Gate Threshold Voltage • High Forward Transfer Admittance • Low Input Capacitance • Low Output Capacitance • High Speed Switching • Avalanch...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRF3808PBF MOSFET Power Electronics High Efficiency & Long-Lasting Switching Solutions

...Power MOSFET Features: - Low On-Resistance - Fast Switching - High-Voltage Capability - Low Gate Charge - Low Output Capacitance - ESD Protected Parameters: - Drain-Source Voltage (Vdss): 500 V - Gate-Source...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRLHM620TRPBF Common Power Mosfet High Current Low On Resistance Low Vce(Sat)

...MOSFET Power Electronics Product Parameters: - Drain-Source Voltage (Vdss): 600V - Gate-Source Voltage (Vgs): ±20V - Continuous Drain Current (Id): 6A - Drain-Source On-State Resistance (Rds): 0.093 ohm - Po...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SVD5865NLT4G Mosfet Tube High Power Low On Resistance TO-263AB

...MOSFET Power Electronics. Features and Specifications: - MOSFET Type: N-Channel - Drain Source Voltage (Vds): 60V - Drain-Source On-Resistance (Rds): 0.0065 Ohm - Continuous Drain Current (Id): 58A - Power D...

Shenzhen Sai Collie Technology Co., Ltd.
China

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FDP032N08 Mosfet Tube High Power Switching And Drive Solutions

...Power MOSFET Product Description: The FDP032N08 is an N-channel power MOSFET designed for use in switching and linear applications. This device is designed to minimize the on-state resistance while providing...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IKW50N60H3 IGBT Power Module High-Performance Low-Loss 600V 50A 3-Phase Switching

... Emitter Saturation Voltage (Vce(sat)): 2.1V@25A • Operating Frequency (f): up to 20kHz • Switching Time (t): 25ns • Thermal Resistance Junction to Case (Rjc): 0...

Shenzhen Sai Collie Technology Co., Ltd.
China

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TPS92611QDGNRQ1 Power Management ICs - Optimized For High Efficiency And Low Power Consumption

Product Listing: TPS92611QDGNRQ1 Power Management IC Features: �� Wide input voltage range: 2.5 V to 6.5 V �� Output voltage accuracy: ��2% �� Operating junction temperature range: -40��C to 125��C �� Low quiescent cu...

Shenzhen Sai Collie Technology Co., Ltd.
China

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TPS5431DDAR PMIC Power Management Step Down Switching Regulator

...Power MOSFET Features: • 4.5V to 28V Input Voltage Range • 3.3V to 12V Output Voltage Range • Up to 5A Output Current • Integrated Power MOSFET • ±2% Output Voltage Accuracy • 0.5µA Typical Shutdown Current ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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IRFP4229PBF Power Mosfet Transistor switching power mosfet PDP SWITCH

...Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications • Low QG for Fast Response • High Repetitive Peak Current Capability for Reliable Operation • Short Fall & Rise Times for Fast S...

ChongMing Group (HK) Int'l Co., Ltd
China

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6MBP100RTA060-01 High Power IGBT Module 100A 347W IPM-N 600V 100A

6MBP100RTA060-01 IGBT Power Module IPM-N 600V 100A Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance a...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

Site Member

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6MBP50RA060-01 IGBT Power Module IPM-N Screw Connection Metal Material

6MBP50RA060-01 IGBT Power Module IPM-N 600V 50A Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Emerson 8105-TI-TC Power Supply Module 200MA Brand New In Box

...Power Supply Module 200MA Brand New In Box Description: Brand Emerson Model Number 8105-TI-TC Type Power Supply Module Current Consumption 200mA Max Resolution & Speed 15 bit plus sign; 420mS Max Warranty 1 ...

Wisdomlong Technology CO.，LTD
China

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SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

... Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTI...

Guangdong Uchi Electronics Co.,Ltd
Guangdong,China

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SIC Integrated Circuit Chip SCT011H75G3AG Power MOSFET Transistors 750V H2PAK-7

... temperature range. Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Switchmode Power Rectifiers Ultrafast Rectifiers 8.0 Amperes 50−600 Volts Low Forward Voltage Mur820g

...Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes, these state−of−the−art devices have the following features: Features • Ultrafast 25, 50 an...

ChongMing Group (HK) Int'l Co., Ltd
China

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T Junction Power Divider

Total 8683 products for t junction power divider Manufacture & Suppliers