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High Power Mosfet Transistors LNK306GN-TL Off Line Switcher IC LNK306GN-TL LinkSwitch-TN Family Lowest Component Count, Energy-Effi ......
Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown ......
High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16 DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpo...
NTA4153NT1G IC Electronic Components Small Signal MOSFET Transistor Product description rated over a 40C to +105C temperature Part number NTA4153NT1G is manufactured by ON Company and distributed by AYE. As ...
TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The TIP120, TIP121 and TIP122 are silicon Epitaxial-Base NPN power transist...
SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 ID 4.5 A Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche...
2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−......
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an ex...
...Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may b...
CYW43362KUBGT RF Power Transistor 2.4 GHz WLAN CMOS amplifier Package 69-UFBGA Type TxRx + MCU RF Family/Standard WiFi Protocol 802.11b/g/n Modulation 16QAM, 64QAM, BPSK, CCK, DSSS, QPSK, OFDM Frequency 2.4GHz ...
Transistors AIMBG120R030M1 Silicon Carbide MOSFET Discretes TO-263-7 package Description of AIMBG120R030M1 The AIMBG120R030M1 is 1200V SiC Mosfet for Automotive family has been developed for current and future ...
Internally Clamped, Current Limited NChannel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gatetosource clamp for ESD protection and...
TC4420 TC4429 6A HIGH-SPEED MOSFET DRIVERS FEATURES Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current Logic Input Will Withstand Negative Swing Up to 5V ESD Protected ..............
2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 15A. High Power Dissipation : 15...
CoolMOSTM Power Transistor Features PG-TO247 New revolutionary high voltage technology Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rat...
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 2N4091 2N4092 2N4093 ABSOLUTE MAXIMUM RATINGS (TA = +25 unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Dra...
... - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Features ■ TYPICAL RDS(on) = 8 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CH...
...Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP STW10NK80Z 800 V 800 V 800 V < 0.90 Ω < 0.90 Ω < 0.90 Ω 9 A 9 A 9 A 160 W 40 W 160 W ■ TYPICAL RDS(on) = 0.78 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ...
...MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 Features Order codes VDSS @TJ max. RDS(on) max. ID STB34NM60ND STF34NM60ND STP34NM60ND STW34NM60ND 650V 0.110 Ω 29A ■ The world’s best RDS(on) i...
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 2N4091 2N4092 2N4093 ABSOLUTE MAXIMUM RATINGS (TA = +25 unless otherwise noted) Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Dra...