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...approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, m...
TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP) FEATURE High voltage MARKING A92=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMA...
TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications Ÿ Good high temperature Ÿ Low saturation voltage Ÿ High speed switching MARKING JCET Logo 13005HD55=De...
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...
TO-126 Plastic-Encapsulated Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V ......
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low speed switching Marking :B772 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
...Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate...
AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher ...
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses ...
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...
NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequ...
...Transistor Semiconductors Discrete Semiconductors Transistors MOSFET IRFB4110PBF MOSFET MOSFT 100V 180A 4.5mOhm 150nC TO-220-3 N-Channel App Characteristics Features High Efficiency Synchronous Rectification...
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...
...Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate...
AP15N10S Mos Field Effect Transistor / 15A 100V Logic Mosfet Switch Mos Field Effect Transistor Introduction Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher ...
TO-92 Plastic-Encapsulate Transistors A92 TRANSISTOR (PNP) FEATURE High voltage MARKING A92=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE XXX=Code ORDERING INFORMA...
TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications Ÿ Good high temperature Ÿ Low saturation voltage Ÿ High speed switching MARKING JCET Logo 13005HD55=De...
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage...
TO-126 Plastic-Encapsulated Transistors B772 TRANSISTOR (PNP) FEATURE Low Speed Switching MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V ......
SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN) FEATURE Low speed switching Marking :B772 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......