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TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number...
TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number...
SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) FEATURE Switching Transistor Marking :2X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base ......
...transistors designed for switching and amplification applications. These transistors are housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. They offer high current capability an...
...transistor designed for switching applications. It offers a collector-emitter voltage of 40V and a collector current of 0.2A, making it suitable for various electronic circuits. This transistor comes in a co...
... it suitable for various electronic circuits. This transistor is housed in a compact SOT-323 package. Product Attributes Brand: Shanghai Siliup Semiconductor Technology Co. Ltd. Product Type: General Purpose...
...transistor designed for switching applications. It features a collector-emitter voltage of -40V and a collector current of -0.2A, making it suitable for various electronic circuits. This transistor is housed...
...Transistors designed for switching and interface circuit applications, as well as drive circuit applications. These transistors are housed in a SOT-23 plastic package and feature integrated base and emitter ...
... designs. Product Attributes Brand: Heyuan China Base Electronics Technology Co., Ltd. Package Type: SOT-23 Plastic Package Transistor Type: PNP Silicon Epitaxial Planar Technical Specifications Model R1 (K)...
... is an NPN Silicon Digital Transistor designed for switching, inverter, interface, and drive circuits. It features built-in bias resistors (R1 = 10 k, R2 = 10 k). The BCR133S variant offers two internally is...
... Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1 = 10 k, R2 = 10 k). The BCR183S/U variants offer two i...
...Transistor The BCR108 series are NPN silicon digital transistors designed for switching circuits, inverters, interface circuits, and driver circuits. They feature built-in bias resistors (R1=2.2 k, R2=47 k)....
...NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features a built-in bias resistor (R1=10 k, R2=47 k). The BCR135S variant offers two int...
... to RN1506 Silicon NPN Epitaxial Transistors The Toshiba RN1501 to RN1506 series are silicon NPN epitaxial transistors designed for switching, inverter, interface, and driver circuit applications. These tran...
...Transistor With RoHS Certificate Metal Oxide Semiconductor Field Effect Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS produc...
...Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Cha...
...Transistor / N Channel Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching tim...
...Transistor / N Channel Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching tim...
...switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-sa...
... voltage (typically 150mV), and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2088 and is suitable for low frequency amplifiers and high-speed switching circui...