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... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Feat...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: The AP50N10P uses advanced trench technology to provide excell...
...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: The AP50N10P uses advanced trench technology to provide excell...
LM1951T switching power mosfet amplifier ic chip Power Mosfet Transistor LM1951 Solid State 1 Amp Switch General Description The LM1951 is a high current, high voltage, high side (PNP) switch with a built-in er...
...Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
...Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better ...
...Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE dio...
... Mode Transistor 8-LDFN Product Description Of IGLD60R070D1AUMA3 IGLD60R070D1AUMA3 is N-Channel 600V 15A Enhancement Mode Transistor. Feature Of IGLD60R070D1AUMA3 Enhancement mode transistor – Normally OFF s...
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...
FGA25N120ANTD Power Switching IGBT 1200V 40A 310W TO3P High Speed Switching Description Employing NPT technology, Fairchilds AND series of IGBTs provides low conduction and switching losses. The AND series off...
Product Description: The RURG8060 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other powe...
...operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and dri...
...Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zene...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables hi...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
...Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zene...