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MMBT4401-AU NPN General Purpose Switching Transistor The MMBT4401-AU is an NPN epitaxial silicon planar design general purpose switching transistor. It features a collector-emitter voltage of 40V and a continuo...
MMBT3906 PNP General Purpose Switching Transistor The MMBT3906 is a PNP epitaxial silicon planar design transistor designed for general purpose switching applications. It offers a collector-emitter voltage of -...
...-purpose switching transistor with a planar design, suitable for various electronic applications. It features a collector-emitter voltage of 40V and a collector current of 600mA, offering reliable performanc...
MMBT3904 NPN General Purpose Switching Transistor The MMBT3904 is an NPN epitaxial silicon planar transistor designed for general-purpose switching applications. It offers a collector-emitter voltage of 40V and...
MMBT4403 - PNP Switching Transistor The MMBT4403 is an epitaxial planar die construction PNP switching transistor designed for general-purpose applications. It offers reliable performance with a compact SOT-23 ...
... NPN Power Transistor The BUJ100LR is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching, high voltage capabil...
...an NPN transistor in a TO-252 package, designed for applications requiring fast switching speeds and low collector-emitter saturation voltage. Its complementary part is the MJD45H11. This transistor is suita...
...transistor in a SOT-23 Plastic Package. It offers low VCE(sat) and high current capabilities, making it suitable for general purpose switching and muting applications. Key features include its suitability fo...
...transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. They offer reliable performance in a compact SOT-23 package.Product Attributes Package: SOT-23 Type: ...
...MJD45H11 is a PNP transistor in a TO-252 package, designed for applications such as power amplifiers and switching circuits. It features a low collector-emitter saturation voltage and fast switching speed. T...
...transistor featuring a small flat SOT-89 package, high-speed switching time, and low collector-emitter saturation voltage. It is complementary to the 2SA1213 and suitable for various applications requiring e...
... planar die construction and is ideal for general-purpose and switching applications. A complementary PNP type, MMBT4403, is also available.Product Attributes Brand: JSMICRO Semiconductor Material: Silicon P...
... loads, and complements the 2SC5894 transistor. This component is suitable for low frequency amplifiers and high-speed switching circuits.Product Attributes Brand: ROHM Package: SOT-89 (MPT3), SC-62 Origin: ...
... voltage, with a typical VCE(sat) of 400mV (Max.) at IC/IB=2A/100mA, and high-speed switching capabilities.Product Attributes Brand: ROHM Package: SOT-89 (MPT3) / SC-62 Origin: Not specified Material: Not sp...
...transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching capabilities with a typical fall time of 80ns, low saturation voltage (typically 150mV), and str...
...a high-speed switching transistor designed for efficient operation. It features low saturation voltage, a wide safe operating area, and complements the 2SC5103 transistor. Ideal for applications requiring fa...
... power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, typically VCE(sat)=-400mV (Max.) at IC/IB=-500mA/-25mA, and high-speed sw...
...Power Transistors (50V / 2A) The 2SCR553P is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, typically VCE(sat) =...
...switching transistor designed for efficient power management. It features low VCE(sat) for reduced power loss and fast switching times (tf: Typ. 0.1 s), making it ideal for applications requiring rapid on/of...
...Transistor designed for general-purpose power amplification and switching. It features a low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0V Max at IC = 8A) and fast switching speeds. This transistor i...