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Total 73057 products for to 3 transistor Manufacture & Suppliers

AD8364ACPZ-REEL7 RF Power Transistors N-Channel High Power Output

Product Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellu...

Shenzhen Sai Collie Technology Co., Ltd.
China

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ADL5350ACPZ-R7 RF Power Transistor - High Efficiency And Reliability

Product: ADL5350ACPZ-R7 RF Power Transistors Description: The ADL5350ACPZ-R7 is an RF power transistor for use in cellular and wireless base station, industrial, scientific and medical (ISM) applications. Featu...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RF Power Transistor HMC1122LP4METR High Gain Low Noise And High Efficiency

HMC1122LP4METR RF Power Transistor Product Description: The HMC1122LP4METR is a high-performance, low-distortion, highly reliable RF power transistor that provides superior performance in high-power application...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AD8351ARMZ-REEL7 General Purpose Transistor High Gain Electronic IC Chip

AD8351ARMZ-REEL7 RF Power Transistor Product Description: The AD8351ARMZ-REEL7 is an advanced silicon bipolar power transistor specifically designed for use in RF power amplifiers applications. It is a high per...

Shenzhen Sai Collie Technology Co., Ltd.
China

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HMC536LP2E RF Power Transistors High Performance Low Noise High Gain

HMC536LP2E RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which operates between DC and 6 GHz. This...

Shenzhen Sai Collie Technology Co., Ltd.
China

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HMC788ALP2ETR RF Power Transistor High Power Gain And Efficiency

HMC788ALP2ETR, RF Power Transistor Description: The HMC788ALP2ETR is a GaN on Silicon Carbide (SiC) RF power transistor that is designed for use in high power, wideband communication systems. It operates over t...

Shenzhen Sai Collie Technology Co., Ltd.
China

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HMC849ALP4CETR RF Power Transistors High Power Low Noise Performance

HMC849ALP4CETR RF Power Transistor High Power Low Noise Performance HMC849ALP4CETRR RF Power Transistors Product Features: -Operating Frequency: up to 4.5GHz -Gain: 11-14dB -Single-ended Output Power: +30dBm -P...

Shenzhen Sai Collie Technology Co., Ltd.
China

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ADF5901WCCPZ RF Power Transistors High Output Power And Efficiency

ADF5901WCCPZ RF Power Transistor High Output Power And Efficiency Product Listing: ADF5901WCCPZ RF Power Transistors Features: �� Broadband Coverage from 2.3 to 2.7GHz �� Output Power: 43.5dBm (400W) @ 2.5GHz �� H...

Shenzhen Sai Collie Technology Co., Ltd.
China

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CYW20736A1KML2GT RF Power Transistors MCU High Performance Excellent Reliability

...Transistors High Performance Excellent Reliability Package 32-VFQFN Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4.1 Frequency 2.4GHz Serial Interfaces I²C, SPI, UART GPIO 14 Voltage - Su...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AD9361BBCZ High Power Rf Transistor

AD9361BBCZ RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide ga...

Shenzhen Sai Collie Technology Co., Ltd.
China

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H2M 2 Stage Amp Transistor Replacement RA60H4452M1-101 For Mobile Radio

... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dr...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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45 Watt 12.8V 2 Stage Power Amp Transistor RA45H8994M1-101 IEC Standard

...transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA30H1317M Mosfet Power Transistor For Mobile Radio 135-175MHz 30W 12.5V

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T

...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat gen...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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ZTX951STZ Bipolar Transistor IC BJT PNP Big Chip SELine

...: Through Hole Package / Case: TO-92-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 60 V Collector- Base Voltage VCBO: 100 V ......

Wisdtech Technology Co.,Limited
Guangdong,China

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VOS617A-4T Optoisolator Transistor Output 3750Vrms 1 Channel high power rf transistor

VOS617A-4T Optoisolator Transistor Output 3750Vrms 1 Channel 4-SSOP Manufacturer: Vishay Product Category: Transistor Output Optocouplers RoHS: Details Mounting Style: SMD/SMT Package / Case: SSOP-4 Number of C...

Wisdtech Technology Co.,Limited
Guangdong,China

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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

...: TO-3P-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V ......

Wisdtech Technology Co.,Limited
Guangdong,China

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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package / Case: TO-3P-3...

Wisdtech Technology Co.,Limited
Guangdong,China

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MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS

MJ13333 SWITCHMODE Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high vol...

Wisdtech Technology Co.,Limited
Guangdong,China

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