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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA Case: Molded plastic Epoxy: UL ...
... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching ......
...Transistor MOSFET Module 24V Trigger 8 CH For Home Intelligent Control What is transistor Transistor, a solid-state semiconductor device, can be used for detection, rectification, amplification, switching, r...
...Transistor Lead Cutting Forming Machine For TO 92 126 220 Intro: RS-909B is designed for cutting and forming tube-packed transistor. It can automatic feed transistor, detect back and front side. It works for...
...Transistors General Purpose Transistor 50V 0.15A MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A) Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low s...
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metall...
...Transistor Lead Cutting Forming Machine For TO 92 126 220 Intro: RS-909B is designed for cutting and forming tube-packed transistor. It can automatic feed transistor, detect back and front side. It works for...
... Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN). FEATURE Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier applications Ÿ As complementary type, the PNP transistor 2N3906 is Reco...
...Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as ...
...is device is suitable for use as a load switch or in PWM applications P Channel Transistor GENERAL FEATURES V DS =- 60V,I D =-50A R DS(ON) < 25mΩ @ V GS =-10V R DS(ON) < 30mΩ @ V GS =-4.5V High Power and ......
Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommen...
... power supplies DC-DC converters Low voltage motor control High Power Transistor Feature 40V/150A R DS(ON) = 2.4mΩ(typ.)@V GS = 10V R DS(ON) = 4.2mΩ(typ.)@V GS = 4.5V 100% Avalanche ......
... Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...
...Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate...
...Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs ma...
... switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =...
... control Switch Mode Power Supplies (SMPS) Power-Over-Ethernet (PoE) Solar inverters Automotive applications Logic Level Transistor Description: The AP50N10P uses advanced trench technology to provide excell...
RS-909A TO-220 Transistor Lead Forming Machine, Transistor Lead Bending Machine Intro: Automatic transistor leads forming machine works for TO-220, To-126,etc. It can automatic feed transistor, detect back and ...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...